Positive tone bi-layer method
View Patent ↗Methods of imprint lithography are described. Generally, the methods include imprinting, via a patterned mold, a pattern into a polymerizable fluid composition on a substrate to form a patterned imprinting layer. A conformal layer is overlayed on the patterned imprinting layer. A portion of the conformal layer is used as a hard mask for subsequent processing. The imprinted pattern may be transferred to the substrate by a plurality of etches.
1. A method of imprint lithography, comprising:
imprinting, via a patterned mold, a pattern into a polymerizable fluid composition on a substrate forming a patterned imprinting layer;
overlaying a conformal layer over the patterned imprinting layer, wherein a portion of the conformal layer is used as a hard mask for subsequent processing; and
transferring the imprinted pattern by a plurality of etches.
2. The method of claim 1 , wherein overlaying includes spinning-on the conformal layer on the imprinted resist layer.
3. The method of claim 1 , wherein the conformal layer comprises a planarizing conformal layer.
4. The method of claim 1 , wherein a first etch partially etches the conformal layer to expose elevated portions of the patterned imprinting layer.
5. The method of claim 4 , wherein the first etch is a blanket etch removing portions of the conformal layer to expose portions of the patterned imprinting layer.
6. The method of claim 4 , wherein a second etch, selective to the patterned imprinting layer, etches portions of the patterned imprinting layer exposed in the first etch to the substrate under the conformal layer.
7. The method of claim 6 , wherein the second etch is an anisotropic etch.
8. The method of claim 6 , further comprising modifying the substrate by a third process, the third process comprising one of an etch, a deposit, and an implanting of material.
9. The method of claim 6 , wherein the second etch is a deeper etch than the first etch.
10. The method of claim 1 , wherein the conformal layer is applied in a liquid form.
11. A method of imprint lithography, comprising:
imprinting, via a patterned mold, a pattern into a polymerizable fluid composition on a substrate forming a patterned imprinting layer; and
overlaying a planarizing conformal layer over the patterned imprinting layer, wherein a portion of the conformal layer is used as a hard mask for subsequent processing;
transferring the imprinted pattern by a plurality of etches;
wherein a blanket etch, which is selective to the conformal layer, partially etches the conformal layer to expose elevated portions of the patterned imprinting layer.
12. The method of claim 11 , wherein an anisotropic etch, selective to the patterned imprinting layer, etches portions of the patterned imprinting layer exposed in the blanket etch to the substrate under the conformal layer.
13. The method of claim 11 , wherein overlaying includes spinning-on the planarizing conformal layer on the imprinted resist layer.
14. A method of imprint lithography, comprising:
imprinting, via a patterned mold, a pattern into a polymerizable fluid composition on a substrate forming a patterned imprinting layer; and
overlaying a conformal layer over the patterned imprinting layer, wherein a portion of the conformal layer is used as a hard mask for subsequent processing;
wherein transfer of the imprinted pattern is performed in a plurality of etches;
wherein a first etch, which is selective to the conformal layer, partially etches the conformal layer to expose elevated portions of the patterned imprinting layer.
15. The method of claim 14 , wherein overlaying includes spinning-on the conformal layer on the imprinted resist layer.
16. The method of claim 14 , wherein the conformal layer comprises a planarizing conformal layer.
17. The method of claim 14 , wherein the first etch is a blanket etch removing portions of the conformal layer to expose portions of the patterned imprinting layer.
18. The method of claim 17 , wherein a second etch, selective to the patterned imprinting layer, etches portions of the patterned imprinting layer exposed in the first etch to the substrate under the conformal layer.
19. The method of claim 18 , wherein the second etch is an anisotropic etch.