Laser-based method and system for removing one or more target link structures
View Patent ↗Laser-based methods and systems for removing one or more target link structures of a circuit fabricated on a substrate includes generating a pulsed laser output at a predetermined wavelength less than an absorption edge of the substrate are provided. The laser output includes at least one pulse having a pulse duration in the range of about 10 picoseconds to less than 1 nanosecond, the pulse duration being within a thermal laser processing range. The method also includes delivering and focusing the laser output onto the target link structure. The focused laser output has sufficient power density at a location within the target link structure to reduce the reflectivity of the target link structure and efficiently couple the focused laser output into the target link structure to remove the target link structure without damaging the substrate.
1. A laser-based method of removing a target link structure of a circuit fabricated on a substrate without causing undesirable damage to the substrate, any dielectric layers between the target link structure and the substrate, or link structures adjacent to the target link structure, the target structure being in a set of link structures, at least some link structures being separated by a pitch of less that 2 microns, the method comprising:
generating a sequence of laser pulses at a first repetition rate of greater than about 1 MHz utilizing a seed laser having a first predetermined wavelength;
optically amplifying at least a portion of the sequence of laser pulses to obtain an amplified sequence of laser pulses comprising a burst of output pulses within a burst envelope shape;
controlling pulse characteristics whereby the burst envelope shape comprises a desired envelope shape; and
delivering and focusing pulses of the burst onto the target link structure during relative motion of the substrate and the focused pulses, substantially all output pulses of the burst having a pulse duration of less than about 1 nanosecond, corresponding to pulse power densities in the range of at least 10 9 W/cm 2 to less than about 10 12 W/cm 2 at the target link structure, and a wavelength of about 1.2 microns or less, wherein the power density of the focused pulses is low enough to avoid undesirable damage, and wherein interaction between the laser pulses and the material is a thermal process.
2. The method of claim 1 , comprising generating seed laser pulses for amplification, and modulating seed pulse energy.
3. The method of claim 2 , comprising optically modulating seed laser output pulses.
4. The method of claim 1 , comprising controlling pulse spacing within the burst.
5. The method of claim 4 , comprising controlling a trigger signal delay digitally.
6. The method of claim 5 , wherein controlling the trigger signal delay changes the envelope shape in a range from a substantially overlapping combined shape envelope to a spaced sequence of non-overlapping burst shapes.
7. The method of claim 1 , comprising controlling amplifier pump diode energy.
8. The method of claim 1 , comprising pulse slicing.
9. The method of claim 1 , comprising pulse compression.
10. The method of claim 1 , comprising pre--amplifying seed pulses.
11. The method of claim 1 , comprising counting down from the first repetition rate to select pulses comprising a sequence of bursts occurring at a reduced second repetition rate of at least 20 KHz, wherein each burst has a desired shape envelope.
12. The method of claim 11 , comprising selecting synchronized pulse bursts corresponding to selected target links.
13. The method of claim 1 , comprising spacing pulses within the burst by a spacing of at least a full width half maximum of one pulse in the burst.
14. The method of claim 1 , wherein the burst comprises a predetermined number of pulses separated by predetermined pulse spacing, whereby the burst shape comprises a predetermined envelope duration.
15. The method of claim 14 , wherein each pulse in the burst comprises a predetermined pulse width and pulse energy, whereby the peak power of each pulse conforms to the desired envelope shape.
16. The method of claim 15 , wherein the total energy of all the focused pulses in the burst is high enough to remove the target link structure while also avoiding the undesirable damage to other link structures in the set of link structures.
17. The method of claim 1 , wherein substantially all output pulses of the burst have a pulse duration of less than about 100 picoseconds.
18. The method of claim 17 , wherein substantially all output pulses of the burst have a pulse duration of more than about 10 picoseconds.
19. The method of claim 1 , wherein substantially all output pulses of the burst are separated by at least about 5 nanoseconds.
20. The method of claim 1 , comprising measuring an energy window using a set of burst characteristics comprising a fixed total burst energy, and varying at least one other burst characteristic in the set to obtain an optimized set with an increased energy window.
21. The method of claim 1 , comprising varying one or more of pulse spacing, envelope duration, number of pulses, pulse energy, pulse width, pulse power, and envelope height.
22. The method of claim 1 , comprising generating an amplified burst of laser pulses having an envelope shape comprising a first high power portion followed by a square portion.
23. The method of claim 1 , comprising controlling pulse characteristics whereby a second burst envelope shape comprises a desired envelope shape.
24. The method of claim 1 , wherein focusing pulses comprises focusing a plurality of spots having at least one non-identical spot distribution or power density.
25. The method of claim 1 wherein focused laser output includes at least one pulse focused to a non-round spot to improve energy enclosure of the focused laser output within the selected target link structure.
26. A system for removing a target link structure of a circuit fabricated on a substrate without causing undesirable damage to the substrate, any dielectric layers between the target link structure and the substrate, or link structures adjacent to the target link structure, the target structure being in a set of link structures, at least some link structures being separated by a pitch of less that 2 microns, the system comprising:
a seed laser apparatus configured to output laser pulses having a wavelength of about 1.2 microns or less;
a seed laser modulation system configured to control characteristics of the seed laser pulses to produce separated bursts of laser pulses corresponding to desired burst envelope shapes;
an optical amplifier configured to receive said bursts as an input and produce amplified bursts having desired envelope shapes as an output; and
a beam delivery system configured to focus and deliver one or more of the amplified bursts along a beam delivery axis to the target link structure during relative motion between the substrate and the beam delivery axis.
27. The system of claim 26 , wherein the seed laser modulation system comprises an optical modulator.
28. The system of claim 26 , wherein the seed laser modulation system comprises control electronics configured to control burst pulse spacing, burst pulse number and burst pulse energy.
29. The system of claim 26 , wherein the optical amplifier comprises a pre-amplifier.
30. The system of claim 26 , comprising a wavelength shifter coupled to the optical amplifier.
31. The system of claim 26 , comprising a beam deflector configured to direct an amplified burst to a target link structure within a predetermined tolerance.
32. The system of claim 26 , wherein the seed laser apparatus comprises a plurality of lasers and a digitally controlled trigger delay.
33. The system of claim 26 comprising a fiber-based laser system.
34. An amplified seed laser based method of removing a target link structure of a circuit fabricated on a substrate without causing undesirable damage to the substrate, any dielectric layers between the target link structure and the substrate, or link structures adjacent to the target link structure, the target structure being in a set of link structures, at least some link structures being separated by a pitch of less than 2 microns, the method comprising:
providing one or more control signals to a seed laser modulation system to generate an amplified burst of laser pulses having a desired envelope shape; and
delivering and focusing pulses of the burst onto the target link structure during relative motion of the substrate and the focused laser pulses, substantially all output pulses of the burst having a pulse duration of less than about 1 nanosecond, corresponding to pulse power densities in the range of at least 10 9 W/cm 2 to less than about 10 12 W/cm 2 at the target link structure, and a wavelength of about 1.2 microns or less, wherein the power density of the focused pulses is low enough to avoid undesirable damage, and wherein interaction between the laser pulses and the material is a thermal process.
35. The method of claim 34 comprising a first high power portion followed by a square portion.
36. The method of claim 34 , comprising controlling pulse characteristics whereby a second burst envelope shape comprises a desired envelope shape.
37. The method of claim 34 , wherein substantially all output pulses of the burst have a pulse duration of less than about 100 picoseconds.
38. The method of claim 37 , wherein substantially all output pulses of the burst have a pulse duration of more than about 10 picoseconds.
39. The method of claim 34 , wherein substantially all output pulses of the burst are separated by at least about 5 nanoseconds.
40. The method of claim 34 , comprising varying one or more of pulse spacing, envelope duration, number of pulses, pulse energy, pulse width, pulse power, and envelope height.