IP Library Granted Patent US 8,441,333
Granted Patent B2
US 8,441,333 · App. 12/958,080 · Granted May 14, 2013

Stack inductor with different metal thickness and metal width

Inventors: Tzuyin Chiu (Shanghai, CN); Xiangming Xu (Shanghai, CN); Miao Cai (Shanghai, CN)
Assignee: Shanghai Hua Hong NEC Electronics Company, Limited
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Quick Facts
Patent No.
US 8,441,333
App. No.
12/958,080
Granted
May 14, 2013
Kind
B2
Abstract

A stacked inductor with different metal thickness and metal width. The stacked inductor comprises top and bottom metal traces which are aligned with each other. The thickness and width of the top and bottom metal traces are different. The top and bottom metal traces are connected at the end of metal trace with via holes. The inductance is increased with the use of the mutual inductance between top and bottom metal layers The parasitic resistor is reduced due to the difference of the top and bottom metal widths.

Claims (15)

1. A stacked inductor with multiple layers of different metal thickness and metal width comprises:

a top metal trace with a first predetermined width;

the inductor starting from an outer port of metal coil on the top metal trace;

a bottom metal trace with a second predetermined width;

the top metal trace is connected to the bottom metal trace at an inner port through via holes;

the bottom metal trace comprises an outer port wherein the outer port of the bottom trace being a port of the inductor;

edges of the top and the bottom metal traces being aligned to each other;

the thickness of the top metal trace is larger than the thickness of the bottom metal trace;

a maximum second predetermined width is larger than a maximum first predetermined width;

a maximum space between metals of the top metal trace is larger than a maximum space between metals of the bottom metal trace;

the top and bottom metal traces being connected; and

the stacked inductor is spired and the shape of the stacked inductor is selected from the group consisting of octagon, polygon and circle.

2. The stacked inductor with multiple layers of different metal thickness and metal width of claim 1 comprises: the top metal trace and the bottom metal trace comprises of two or more metal layers.

3. The stacked inductor with multiple layers of different metal thickness and metal width of claim 1 comprises: the quantity of turns of the top metal trace is different from the quantity of turns of the bottom metal trace.

4. The stacked inductor with multiple layers of different metal thickness and metal width of claim 1 comprises: the top metal trace and the bottom metal trace are wound in clockwise or counterclockwise direction.

Assignments (2)
MERGER Recorded May 13, 2014
From: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
To: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 032885/0047 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2010
From: CHIU, TZUYIN; XU, XIANGMING; CAI, MIAO
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LIMITED
Reel/Frame 025434/0498 →
Priority Claims (1)
CN 2009 1 0201904 · Dec 8, 2009 · national
Continuity (1)
Related Publication 20110133875A1 · Jun 9, 2011