Patent Assignment
Reel/Frame 032885/0047
Merger
Recorded: 2014-05-13
Pages: 7
Assignor
SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
Executed: 2013-01-24
Assignee
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
NO. 1399, ZUCHONGZHI ROAD, ZHANGJIANG HI-TECH PARK, SHANGHAI, 201203, CHINA
Covered Properties
(68)
Sense Amplifier Used in Electrically Erasable Programmable Read-Only Memory and the Implementing Method Thereof
Decoding Circuit Withstanding High Voltage via Low-Voltage Mos Transistor and the Implementing Method Thereof
Self-Calibration Method of a Reading Circuit of a Nonvolatile Memory
Semiconductor Device with Alternately Arranged P-Type and N-Type Thin Semiconductor Layers and Method for Manufacturing the Same
Stack Inductor with Different Metal Thickness and Metal Width
Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process
Stacked Inductor
High Voltage Bipolar Transistor with Pseudo Buried Layers
Sige Heterojunction Bipolar Transistor Multi-Finger Structure
Parasitic Vertical PNP Bipolar Transistor And Its Fabrication Method In Bicmos Process
Parasitic Vertical Pnp Bipolar Transistor in Bicmos Process
Novel Manufacturing Approach for Collector and a Buried Layer of Bipolar Transistor
A Novel Manufacturing Approach for Collector and A Buried Layer Of Bipolar Transistor
Method of Manufacturing Superjunction Structure
Terminal Structure for Superjunction Device and Method of Manufacturing the Same
Method for Etching and Filling Deep Trenches
Method for Manufacturing Trench Type Superjunction Device and Trench Type Superjunction Device
Parasitic Pin Device in a Bicmos Process and Manufacturing Method of the Same
Vertical Parasitic Pnp Device in a Bicmos Process and Manufacturing Method of the Same
Pseudo Buried Layer and Manufacturing Method of the Same, Deep Hole Contact and Bipolar Transistor
Parasitic Pnp Bipolar Transistor in a Silicon-Germanium Bicmos Process
Silicon-Germanium Heterojunction Bipolar Transistor
Esd Protection Structure
Ldmos Device Structure and Manufacturing Method of the Same
Silicon-Germanium Heterojunction Bipolar Transistor
High-Voltage Esd Protection Device
Sige Heterojunction Bipolar Transistor Having Low Collector/Base Capacitance and Manufacturing Method of the Same
Method of Sige Epitaxy with High Germanium Concentration
Application:
13/288,869 →
Publication:
US 2012/0115310
Pn-Junction Varactor in a Bicmos Process and Manufacturing Method of the Same
Vertical Parasitic Pnp Device in a Silicon-Germanium Hbt Process and Manufacturing Method of the Same
Application:
13/330,458 →
Publication:
US 2012/0181579
Decoding Circuit Withstanding High Voltage via Low-Voltage Mos Transistor and the Implementing Method Thereof
Superjunction Device and Method for Manufacturing the Same
Superjunction Structure, Superjunction Mos Transistor and Manufacturing Method Thereof
Vertical Pnp Device in a Silicon-Germanium Bicmos Process and Manufacturing Method Thereof
Application:
13/608,545 →
Publication:
US 2013/0075730
Bond Pad Structure
Polysilicon-Insulator-Silicon Capacitor in a Sige Hbt Process and Manufacturing Method Thereof
Application:
13/613,209 →
Publication:
US 2013/0113078
Sige Hbt and Method of Manufacturing the Same
Method of Inserting Dummy Patterns
Bipolar Transistor and Method of Manufacturing the Same
Application:
13/658,167 →
Publication:
US 2013/0099351
SiGe HBT and Manufacturing Method Thereof
Application:
13/658,927 →
Publication:
US 2013/0099288
Structure for Picking Up a Buried Layer and Method Thereof
Application:
13/670,871 →
Publication:
US 2013/0113104
Sige Hbt Having Deep Pseudo Buried Layer and Manufacturing Method Thereof
Sige Hbt and Manufacturing Method Thereof
High Speed Sige Hbt and Manufacturing Method Thereof
Parasitic Lateral Pnp Transistor and Manufacturing Method Thereof
Ultra High Voltage Sige Hbt and Manufacturing Method Thereof
Method of Manufacturing Non-Photosensitive Polyimide Passivation Layer
Silicon-Germanium Heterojunction Bipolar Transistor and Manufacturing Method Thereof
Method of Filling Shallow Trenches
Method of Double-Sided Patterning
Zener Diode in a Sige Bicmos Process and Method of Fabricating the Same
Method of Preventing Dopant from Diffusing into Atmosphere in a Bicmos Process
Application:
13/753,983 →
Publication:
US 2013/0196491
Field Stop Structure, Reverse Conducting Igbt Semiconductor Device and Methods for Manufacturing the Same
Application:
13/790,292 →
Publication:
US 2013/0234201
Digital Correction Circuit for a Pipelined Analog-to-Digital Converter
Superjunction Device
Sige Hbt Device and Manufacturing Method of the Same
Structure for Picking Up a Collector and Manufacturing Method Thereof
Structure for Picking Up a Collector and Method of Manufacturing the Same
Ultra-High Voltage Sige Hbt Device and Manufacturing Method of the Same
Ldmos Device with Step-Like Drift Region and Fabrication Method Thereof
Rf Ldmos Device and Fabrication Method Thereof
Rf Ldmos Device and Fabrication Method Thereof
Application:
13/964,678 →
Publication:
US 2014/0042522
Method of Back-Side Patterning
Method of Fabricating P-Type Surface-Channel Ldmos Device with Improved in-Plane Uniformity
Semiconductor Device and Method for Fabricating the Same
Ldmos Device with Step-Like Drift Region and Fabrication Method Thereof
Super-Junction Device and Method of Forming the Same
Silicon-Based Optical Fiber Clamp and Methods of Fabricating the Same
Related Assignments
(17)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 12, 2009
From: WANG, NAN; LI, ZHAOGUI; YAO, XIANG; WANG, ZI
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LTD.
Reel/Frame 022943/0166 →
Assignment of Assignor's Interest
Jul 20, 2009
From: WANG, NAN; YAO, XIANG
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LTD.
Reel/Frame 022975/0521 →
Assignment of Assignor's Interest
Jul 20, 2009
From: WANG, NAN; FENG, GUOYOU
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LTD.
Reel/Frame 022975/0335 →
Assignment of Assignor's Interest
Jul 8, 2010
From: XIAO, SHENGAN; HAN, FENG
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LIMITED
Reel/Frame 024655/0928 →
Assignment of Assignor's Interest
Dec 1, 2010
From: CHIU, TZUYIN; XU, XIANGMING; CAI, MIAO
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LIMITED
Reel/Frame 025434/0498 →
Assignment of Assignor's Interest
Dec 8, 2010
From: QIAN, WENSHENG; HU, JUN; LIU, DONGHUA
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LIMITED
Reel/Frame 025479/0676 →
Assignment of Assignor's Interest
Dec 8, 2010
From: CHIU, TZUYIN; XU, XIANGMING; CAI, MIAO
To: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
Reel/Frame 025468/0386 →
Assignment of Assignor's Interest
Dec 13, 2010
From: CHIU, TZUYIN; CHU, TUNGYUAN; QIAN, WENSHENG; FAN, YUNGCHIEH
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LIMITED
Reel/Frame 025474/0793 →
Assignment of Assignor's Interest
Dec 17, 2010
From: CHIU, TZUYIN; ZHOU, ZHENGLIANG; CHEN, XIONGBIN
To: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
Reel/Frame 025516/0109 →
Assignment of Assignor's Interest
Dec 22, 2010
From: CHIU, TZUYIN; CHU, TUNGYUAN; QIAN, WENSHENG; FAN, YUNGCHIEH
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LIMITED
Reel/Frame 025561/0627 →
Assignment of Assignor's Interest
Dec 25, 2010
From: CHIU, TZUYIN; CHU, TUNGYUAN; QIAN, WENSHENG; FAN, YUNGCHIEH
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LIMITED
Reel/Frame 025568/0463 →
Assignment of Assignor's Interest
Dec 28, 2010
From: CHIU, TZUYIN; CHU, TUNGYUAN; FAN, YUNGCHIEH; QIAN, WENSHENG
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LIMITED
Reel/Frame 025545/0001 →
Assignment of Assignor's Interest
Dec 28, 2010
From: CHIU, TZUYIN; CHU, TUNGYUAN; FAN, YUNGCHIEH; QIAN, WENSHENG
To: SHANGHAI HUA HONG NEC ELECTRONICS COMPANY, LIMITED
Reel/Frame 025544/0701 →
Assignment of Assignor's Interest
Mar 29, 2011
From: LIU, JIQUAN; XIE, XUAN
To: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
Reel/Frame 026044/0784 →
Assignment of Assignor's Interest
Mar 30, 2011
From: XIAO, SHENGAN; WANG, FEI; LIU, YANPING
To: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
Reel/Frame 026052/0353 →
Assignment of Assignor's Interest
Jun 8, 2011
From: CHENG, XIAOHUA; XIAO, SHENGAN
To: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
Reel/Frame 026412/0648 →
Assignment of Assignor's Interest
Jun 27, 2011
From: WANG, FEI; XIAO, SHENGAN; QIAN, WENSHENG
To: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
Reel/Frame 026508/0073 →