Parasitic PIN device in a BiCMOS process and manufacturing method of the same

1. A parasitic PIN device in a BiCMOS process, formed on a P-type silicon substrate, an active region being isolated by shallow trench isolation oxide layers, wherein the parasitic PIN device comprises:

an N-type region, comprising N-type pseudo buried layers formed at the bottom of the shallow trench isolation oxide layers and extending into the active region, the N-type region being picked up by forming contact holes in the shallow trench isolation oxide layers and filling the contact holes with metal;

an I-type region, comprising an N-type collector implantation region formed in the active region, the N-type collector implantation region contacting with the N-type region that extends into the active region;

a P-type region, comprising an intrinsic base epitaxial layer formed on a surface of the active region and an extrinsic base implantation region formed in the intrinsic base epitaxial layer by extrinsic base implantation, the P-type region contacting with the I-type region, wherein the P-type region is picked up by forming a metal contact thereon.

2. The parasitic PIN device in a BiCMOS process as claimed in claim 1 , wherein the N-type pseudo buried layers are formed by ion implantation at the bottom of the shallow trench isolation oxide layers, the implantation dose being 1 e14 cm −2 ˜1 e16 cm −2 , the implantation energy being less than 30 Kev, the impurities implanted being phosphor, arsenic or antimony, the impurity concentration being in a range of 1 e19 cm −3 ˜1 e21 cm −3 .

3. The parasitic PIN device in a BiCMOS process as claimed in claim 1 , wherein the intrinsic base epitaxial layer of the P-type region is a P-doped silicon epitaxial layer, or a P-doped Silicon-Germanium epitaxial layer, or a P-doped Carbon-Silicon-Germanium epitaxial layer, which is formed by in-situ P-doping and extrinsic base region ion implantation, the impurity concentration of the P-doping being in a range of 1 e19 cm −3 ˜1 e21 cm −3 , the impurities implanted during the extrinsic base region ion implantation being boron or fluoride boron, the implantation dose being 1 e14 cm −2 ˜1 e15 cm −2 , the implantation energy being 2 KeV˜30 KeV.

4. The parasitic PIN device in a BiCMOS process as claimed in claim 1 , wherein the impurities implanted in the collector implantation region of the 1-type region are phosphor or arsenic, the implantation dose being 1 e12 cm −2 ˜5 e13 cm −2 , the implantation energy being 100 KeV˜2000 KeV.

5. The parasitic PIN device in the BiCMOS process as claimed in claim 1 , wherein the N-type pseudo buried layers are in contact with each other.

6. A manufacturing method of parasitic PIN device in a BiCMOS process, comprising the following steps:

step 1: forming shallow trenches in a P-type silicon substrate by shallow trench etch process and isolating an active region by the shallow trenches;

step 2: forming N-type pseudo buried layers by N-type pseudo buried layer ion implantation at the bottom of the shallow trenches, the N-type pseudo buried layers forming an N-type region;

step 3: forming shallow trench isolation oxide layers by tilling silicon oxide into the shallow trenches;

step 4: forming an I-type region by N-type collector implantation in the active region;

step 5: conducting thermal annealing to the silicon substrate, enabling the N-type region to extend vertically and laterally into the active region and contact with the I-type region during the annealing process;

step 6: forming a P-type region by forming an intrinsic base epitaxial layer on a surface of the active region and forming an extrinsic base implantation region by P-type extrinsic base region ion implantation into the intrinsic base epitaxial layer, the P-type region being in contact with the I-type region;

step 7: forming deep-hole contacts in the shallow trench isolation oxide layers on the N-type region to pick up the N-type region, and forming a metal contact on the P-type region to pick up the P-type region.

7. The manufacturing method as claimed in claim 6 , wherein the implantation dose of the N-type pseudo buried layer ion implantation in step 2 is 1 e14 cm −2 ˜1 e16 cm −2 , the implantation energy is less than 30 Kev, and the impurities implanted are phosphor, arsenic or antimony.

8. The manufacturing method as claimed in claim 6 , wherein the impurities implanted by the collector implantation in step 4 are phosphor or arsenic, the implantation dose being 1 e12 cm −2 ˜5 e13 cm −2 , the implantation energy being 100 KeV˜2000 KeV.

9. The manufacturing method as claimed in claim 6 , wherein the intrinsic base epitaxial layer in step 6 is an in-situ P-doped silicon epitaxial layer or Silicon-Germanium epitaxial layer or Carbon-Silicon-Germanium epitaxial layer, the impurities implanted in the extrinsic base implantation region being boron or fluoride boron, the implantation dose being 1 e14 cm −2 ˜1 e15 cm −2 , the implantation energy being 2 KeV˜30 KeV.

10. The manufacturing method as claimed in claim 6 , wherein step 5 further comprises enabling the N-type pseudo buried layers to be in contact with each other during the thermal annealing process.