METHOD OF PREVENTING DOPANT FROM DIFFUSING INTO ATMOSPHERE IN A BICMOS PROCESS
A method of preventing dopant from diffusing into atmosphere in a BiCMOS process is disclosed. The BiCMOS process includes the steps of: depositing a first silicon oxide layer and a silicon nitride layer over surface of a silicon substrate; etching the silicon substrate to form a plurality of shallow trenches therein; depositing a second silicon oxide layer over surface of the silicon substrate and forming silicon oxide sidewalls over inner side faces of each of the plurality of shallow trenches; forming a heavily doped pseudo buried layer under a bottom of one of the plurality of shallow trenches by implanting a dopant with a high concentration; performing an annealing process to promote diffusion of the dopant contained in the pseudo buried layer, wherein the method includes growing, by thermal oxidation, a silicon oxide layer over a bottom of each of the plurality of shallow trenches during the annealing process.
1 . A method of preventing a dopant from diffusing into an atmosphere in a bipolar complementary metal oxide semiconductor (BiCMOS) process, the BiCMOS process including the steps of:
depositing a first silicon oxide layer and a silicon nitride layer over surface of a silicon substrate;
etching the silicon substrate to form a plurality of shallow trenches therein;
depositing a second silicon oxide layer over surface of the silicon substrate and forming silicon oxide sidewalls over inner side faces of each of the plurality of shallow trenches;
forming a heavily doped pseudo buried layer under a bottom of one of the plurality of shallow trenches by implanting a dopant with a high concentration; and
performing an annealing process to promote diffusion of the dopant contained in the pseudo buried layer,
wherein the method comprising growing, by thermal oxidation, a silicon oxide layer over a bottom of each of the plurality of shallow trenches during the annealing process.
2 . The method according to claim 1 , wherein the silicon oxide layer over the bottom of the one of the plurality of shallow trenches where the heavily doped pseudo buried layer is formed has a thickness greater than that of the silicon oxide layers over bottoms of the rest of the plurality of shallow trenches.
3 . The method according to claim 1 , wherein the silicon nitride layer has a thickness of 300 Å to 1000 Å and the silicon oxide sidewalls have a thickness of 200 Å to 1200 Å.
4 . The method according to claim 1 , wherein the dopant with a high concentration is boron.
5 . The method according to claim 1 , wherein the dopant with a high concentration is implanted at a dose of 1e14 cm −2 to 1e16 cm −2 with an energy of 5 KeV to 50 KeV.
6 . The method according to claim 1 , wherein the annealing process is carried out at a temperature of 900° C. to 1000° C. for 30 minutes to 60 minutes.
7 . The method according to claim 1 , wherein the thermal oxidation is carried out at a temperature of 900° C. to 1000° C. for 30 minutes to 60 minutes.