Bond pad structure
View Patent ↗A bond pad structure for an integrated circuit chip package is disclosed. The bond pad structure includes a top metal layer, a patterned metal layer and an interconnection structure. The patterned metal layer is formed below the top metal layer and includes an annular metal layer and a plurality of metal blocks evenly arranged at a central area of the annular metal layer; the patterned metal layer is connected to the top metal layer through both the annular metal layer and the metal blocks. The interconnection structure is formed below the patterned metal layer and is connected to patterned metal layer only through the annular metal layer. By using the above structure, active or passive devices can be disposed under the bond pad structure and will not be damaged by package stress. An integrated circuit employing the above bond pad structure is also disclosed.
1. A bond pad structure, comprising:
a top metal layer;
a patterned metal layer formed below the top metal layer, the patterned metal layer comprising an annular metal layer and a plurality of metal blocks evenly arranged at a central area of the annular metal layer, the patterned metal layer being connected to the top metal layer through both the annular metal layer and the metal blocks; and
an interconnection structure formed below the patterned metal layer, the interconnection structure being connected to the patterned metal layer only through the annular metal layer.
2. The bond pad structure according to claim 1 , wherein the interconnection structure comprises one layer of metal or a plurality of metal layers interconnected by vias.
3. The bond pad structure according to claim 1 , wherein the top metal layer is octagon-shaped and the annular metal layer is octagon-shaped.
4. The bond pad structure according to claim 1 , wherein the metal blocks are square-shaped.
5. The bond pad structure according to claim 1 , wherein the plurality of metal blocks are arranged into a rectangular matrix.
6. The bond pad structure according to claim 1 , wherein the width of the annular metal layer is 10˜20 μm.
7. The bond pad structure according to claim 6 , wherein the side length of each metal block is 2˜5 μm.
8. The bond pad structure according to claim 1 , wherein each of the metal blocks is connected to the top metal layer through 4˜8 vias.
9. The bond pad structure according to claim 1 , wherein a bond pad window is provided at a central area of the top metal layer.
10. The bond pad structure according to claim 3 , wherein a bond pad window is provided at a central area of the top metal layer, the bond pad window having a shape of octagon.
11. An integrated circuit, comprising:
a silicon substrate;
active or negative devices formed on a surface of the silicon substrate; and
a bond pad structure formed substantially over at least one of the active or negative devices,
wherein the bond pad structure comprises:
an interconnection structure electrically connected to the at least one of the active or negative devices;
a patterned metal layer formed above the interconnection structure, the patterned metal layer comprising an annular metal layer and a plurality of metal blocks evenly arranged at a central area of the annular metal layer, the patterned metal layer being connected to the interconnection structure only through the annular metal layer; and
a top metal layer formed above the patterned metal layer and being connected to the patterned metal layer through both the annular metal layer and the metal blocks.
12. The integrated circuit according to claim 11 , wherein the interconnection structure comprises one layer of metal or a plurality of metal layers interconnected by vias.
13. The integrated circuit according to claim 11 , wherein the top metal layer is octagon-shaped and the annular metal layer is octagon-shaped.
14. The integrated circuit according to claim 11 , wherein the metal blocks are square-shaped.
15. The integrated circuit according to claim 11 , wherein the plurality of metal blocks are arranged into a rectangular matrix.
16. The integrated circuit according to claim 11 , wherein the width of the annular metal layer is 10˜20 μm.
17. The integrated circuit according to claim 16 , wherein the side length of each metal block is 2˜5 μm.
18. The integrated circuit according to claim 11 , wherein each of the metal blocks is connected to the top metal layer through 4˜8 vias.
19. The integrated circuit according to claim 11 , wherein a bond pad window is provided at a central area of the top metal layer.
20. The integrated circuit according to claim 13 , wherein a bond pad window is provided at a central area of the top metal layer, the bond pad window having a shape of octagon.