Zener diode in a SiGe BiCMOS process and method of fabricating the same
A zener diode in a SiGe BiCMOS process is disclosed. An N-type region of the zener diode is formed in an active region and surrounded by an N-deep well. A pseudo buried layer is formed under each of the shallow trench field oxide regions on a corresponding side of the active region, and the N-type region is connected to the pseudo buried layers via the N-deep well. The N-type region has its electrode picked up by deep hole contacts. A P-type region of the zener diode is formed of a P-type ion implanted region in the active region. The P-type region is situated above and in contact with the N-type region, and has a doping concentration greater than that of the N-type region. The P-type region has its electrode picked up by metal contact. A method of fabricating zener diode in a SiGe BiCMOS process is also disclosed.
1. A zener diode in a silicon-germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) process, the zener diode being formed on a silicon substrate having an active region isolated by shallow trench field oxide regions, the zener diode comprising:
an N-deep well in the active region, the N-deep well having a depth greater than that of the shallow trench field oxide regions, the N-deep well having a lateral extending portion on each side of the active region, the lateral extending portion being situated under a corresponding shallow trench field oxide region;
an N-type region formed of an N-type ion implanted region in the active region, the N-type region having a lateral dimension equal to or smaller than that of the active region and being surrounded by the N-deep well;
pseudo buried layers, each being formed of an N-type ion implanted region under a corresponding shallow trench field oxide region on a corresponding side of the active region, each of the pseudo buried layers being in contact with a corresponding lateral extending portion of the N-deep well, the N-type region being connected to the respective pseudo buried layers via the N-deep well;
deep hole contacts formed in a corresponding shallow trench field oxide region above a corresponding pseudo buried layer;
a P-type region formed of a P-type ion implanted region in the active region, the P-type region being situated above and in contact with the N-type region, the P-type region having a doping concentration greater than that of the N-type region; and
a metal contact formed above the active region and in contact with the P-type region.
2. The zener diode according to claim 1 , wherein the N-type region is formed in a same manner by which a collector region of a SiGe heterojunction bipolar transistor is formed.
3. The zener diode according to claim 1 , wherein the P-type region is formed in a same manner by which a source/drain implantation region of a PMOS transistor is formed.
4. A method of fabricating zener diode in a SiGe BiCMOS process, the method comprising the steps of:
forming shallow trenches and an active region in a silicon substrate;
forming pseudo buried layers by implanting N-type ions into bottoms of the respective shallow trenches;
forming shallow trench field oxide regions by filling the respective shallow trenches with a dielectric material;
forming an N-deep well in the active region by an ion implantation process, the N-deep well having a depth greater than that of the shallow trench field oxide regions, the N-deep well having a lateral extending portion on each side of the active region, each of the pseudo buried layers being in contact with a corresponding lateral extending portion of the N-deep well;
forming an N-type region by implanting N-type ions into the active region, the N-type region having a lateral dimension equal to or smaller than that of the active region and being surrounded by the N-deep well, the N-type region being connected to the respective pseudo buried layers via the N-deep well;
forming a P-type region by implanting P-type ions into the active region, the P-type region being situated above and in contact with the N-type region, the P-type region having a doping concentration greater than that of the N-type region;
forming deep hole in a corresponding shallow trench field oxide region above a corresponding pseudo buried layer; and
forming a metal contact above the active region and in contact with the P-type region.
5. The method according to claim 4 , wherein the pseudo buried layers are form by implanting phosphorus ions into the bottoms of the respective shallow trenches with a dose of 1e14 cm −2 to 1e16 cm −2 and an energy of 2 KeV to 50 KeV.
6. The method according to claim 4 , wherein the N-type region is form by using a same N-type ion implantation process by which a collector region of a SiGe HBT is formed.
7. The method according to claim 6 , wherein the N-type ion implantation process is performed by using phosphorus as impurity with a dose of 2e12 cm −2 to 5e14 cm −2 and an energy of 30 KeV to 350 KeV.
8. The method according to claim 4 , wherein the P-type region is formed by using a same P-type ion implantation process by which a source/drain implantation region of a PMOS transistor is formed.
9. The method according to claim 4 , wherein the N-deep well is form by a phosphorus ions implantation process with a dose of 2e12 cm −2 to 1e14 cm −2 and an energy of 1500 KeV to 2000 KeV.