Ultra high voltage SiGe HBT and manufacturing method thereof
An ultra high voltage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, in which, a collector region is formed between two isolation structures; a pseudo buried layer is formed under each isolation structure and each side of the collector region is connected with a corresponding pseudo buried layer; a SiGe field plate is formed on each of the isolation structures; each pseudo buried layer is picked up by a first contact hole electrode and each SiGe field plate is picked up by a second contact hole electrode; and each first contact hole electrode is connected to its adjacent second contact hole electrode and the two contact hole electrodes jointly serve as an emitter. A manufacturing method of the ultra high voltage SiGe HBT is also disclosed.
1. A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), comprising:
a substrate;
two trenches formed in the substrate, each of the trenches having an isolation structure formed therein;
two pseudo buried layers, each being formed under a corresponding one of the trenches;
a collector region formed between the isolation structures, each side of the collector region being connected with a corresponding one of the pseudo buried layers; and
two SiGe field plates, each being formed on one of the isolation structures,
wherein each of the pseudo buried layers is picked up via a first contact hole electrode formed in a corresponding isolation structure; each of the SiGe field plates is picked up via a second contact hole electrode formed thereon; and each second contact hole electrode is connected to its adjacent first contact hole electrode so that the two electrodes jointly serve as a collector.
2. The SiGe HBT according to claim 1 , wherein each of the pseudo buried layers has a doping concentration greater than that of the collector region.
3. The SiGe HBT according to claim 1 , wherein each of the SiGe field plates is situated above where the collector region is connected with the corresponding one of the pseudo buried layers.
4. The SiGe HBT according to claim 1 , further comprising:
a SiGe base region formed on the collector region, the SiGe base region being situated between the SiGe field plates and not being connected to either of the SiGe field plates; and
a polysilicon emitter formed on the SiGe base region.
5. A method of manufacturing silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), comprising:
forming two trenches in a substrate;
forming a pseudo buried layer under each of the trenches;
forming an isolation structure in each of the two trenches and a collector region between the isolation structures, each side of the collector region being connected with a corresponding one of the pseudo buried layers;
forming a SiGe field plate on each isolation structure;
forming a first contact hole electrode in each isolation structure for picking up a corresponding pseudo buried layer and forming a second contact hole electrode on each SiGe field plate for picking up the corresponding SiGe field plate; and
connecting each first contact hole electrode to its adjacent second contact hole electrode so that the two electrodes jointly serve as a collector.
6. The method according to claim 5 , wherein the pseudo buried layer is formed by ion implantation with an implantation dose of 1×10 14 atoms/cm 2 to 1×10 16 atoms/cm 2 and an implantation energy of 2 KeV to 50 KeV.
7. The method according to claim 5 , wherein the collector region is formed by ion implantation with an implantation dose of 2×10 12 atoms/cm 2 to 5×10 14 atoms/cm 2 and an implantation energy of 30 KeV to 350 KeV.
8. The method according to claim 5 , wherein forming a SiGe field plate on each isolation structure includes:
epitaxially growing a SiGe epitaxial layer on a surface of the substrate; and
etching the SiGe epitaxial layer to form a SiGe field plate on each isolation structure.
9. The method according to claim 8 , wherein a SiGe base region is also formed during the process of etching the SiGe epitaxial layer, and the formed SiGe base region is situated between the SiGe field plates and is not connected to either of the SiGe field plates.
10. The method according to claim 8 , further comprising forming a polysilicon emitter region on the SiGe epitaxial layer after epitaxially growing a SiGe epitaxial layer and before etching the SiGe epitaxial layer.
11. The method according to claim 8 , wherein the SiGe epitaxial layer is in-situ doped during the epitaxial growth to achieve a doping concentration of 1×10 19 atoms/cm 3 to 7×10 19 atoms/cm 3 of the SiGe epitaxial layer.