High-voltage ESD protection device
View Patent ↗The present invention discloses a high-voltage ESD protection device including a silicon controlled rectifier and a first PNP transistor. The silicon controlled rectifier includes a high-voltage P-well and N-well; a first N+ and P+ diffusion region are formed in the high-voltage P-well; a second N+ and P+ diffusion region are formed in the high-voltage N-well. The first PNP transistor comprises an N-type buried layer; a low-voltage N-well formed in the N-type buried layer; and a base, emitter and collector formed in the low-voltage N-well. The base and emitter are shorted together; the collector is shorted to the second N+ diffusion region and the second P+ diffusion region; the first N+ diffusion region is shorted to the first P+ diffusion region to act as a ground terminal. The high-voltage ESD protection device can effectively adjust the ESD trigger voltage and improve the snapback sustaining voltage after the device is switched on.
1. A high-voltage ESD protection device, comprising a silicon controlled rectifier, a first PNP transistor and an isolation high-voltage P-well for isolating the silicon controlled rectifier from the first PNP transistor, wherein:
the silicon controlled rectifier and the first PNP transistor are formed on a P-type epitaxial layer of a silicon substrate;
the silicon controlled rectifier comprises a high-voltage P-well and a high-voltage N-well adjacent to each other;
a first N+ diffusion region and a first P+ diffusion region are formed in the high-voltage P-well;
a second N+ diffusion region and a second P+ diffusion region are formed in the high-voltage N-well;
the first PNP transistor comprises an N-type buried layer and a low-voltage N-well formed in the N-type buried layer of the first PNP transistor;
a third N+ diffusion region, a third P+ diffusion region, and a fourth P+ diffusion region are formed in the low-voltage N-well of the first PNP transistor to serve as a base, an emitter and a collector of the first PNP transistor, respectively;
the base and the emitter of the first PNP transistor are shorted to each other and connected to an electrostatic terminal;
the collector of the first PNP transistor is shorted to the second N+ diffusion region and the second P+ diffusion region;
the first N+ diffusion region is shorted to the first P+ diffusion region to act as a ground terminal for dissipating an electrostatic discharge between the electrostatic terminal and the ground terminal.
2. The high-voltage ESD protection device according to claim 1 , further comprising a second PNP transistor, wherein:
the second PNP transistor is formed on the P-type epitaxial aver of the silicon substrate and is adjacent to the first PNP transistor;
the second PNP transistor has a same structure with the first PNP transistor;
the base and the emitter of the first PNP transistor are connected to the electrostatic terminal through the second PNP transistor, wherein:
a base and an emitter of the second PNP transistor are shorted to each other and connected to the electrostatic terminal;
a collector of the second PNP transistor is shorted to the base and the emitter of the first PNP transistor.
3. The high-voltage ESD protection device according to claim 1 , further comprising a PMOS transistor, wherein:
the PMOS transistor is formed on the P-type epitaxial layer of the silicon substrate and is adjacent to the first PNP transistor;
the PMOS transistor comprises an N-type buried layer and a low-voltage N-well formed in the N-type buried layer of the PMOS transistor;
a gate of the PMOS transistor is formed on a surface of the low-voltage N-well;
a fifth P+ diffusion region and a sixth P+ diffusion region are formed in the low-voltage N-well of the PMOS transistor to serve as a source and a drain of the PMOS transistor, respectively;
the base and the emitter of the first PNP transistor are connected to the electrostatic terminal through the PMOS transistor, wherein:
the gate, the source and the N-type buried layer of the PMOS transistor are shorted together and connected to the electrostatic terminal;
the drain of the PMOS transistor is shorted to the base and the emitter of the first PNP transistor.
4. The high-voltage ESD protection device according to claim 1 , wherein one end of the isolation high-voltage P-well is adjacent to the high-voltage N-well of the silicon controlled rectifier and the other end of the isolation high-voltage P-well is adjacent to the N-type buried layer of the first PNP transistor to isolate the silicon controlled rectifier from the first PNP transistor.
5. A high-voltage ESD protection device, comprising a silicon controlled rectifier, a first PMOS transistor and an isolation high-voltage P-well for isolating the silicon controlled rectifier from the first PMOS transistor, wherein:
the silicon controlled rectifier and the first PMOS transistor are formed on a P-type epitaxial layer of a silicon substrate;
the silicon controlled rectifier comprises a high-voltage P-well and a high-voltage N-well adjacent to each other;
a first N+ diffusion region and a first P+ diffusion region are formed in the high-voltage P-well;
a second N+ diffusion region and a second P+ diffusion region are formed in the high-voltage N-well;
the first PMOS transistor comprises an N-type buried layer and a low-voltage N-well formed in the N-type buried layer of the first PMOS;
a gate of the first PMOS transistor is formed on a surface of the low-voltage N-well;
a third P+ diffusion region and a fourth P+ diffusion region are formed in the low-voltage N-well of the first PMOS to serve as a source and a drain of the first PMOS transistor, respectively;
the gate, the source and the N-type buried layer of the first PMOS transistor are shorted together and connected to an electrostatic terminal;
the drain of the first PMOS transistor is shorted to the second N+ diffusion region and the second P+ diffusion region;
the first N+ diffusion region is shorted to the first P+ diffusion region to act as a ground terminal for dissipating an electrostatic discharge between the electrostatic terminal and the ground terminal.
6. The high-voltage ESD protection device according to claim 5 , further comprising a PNP transistor, wherein:
the PNP transistor is formed on the P-type epitaxial layer of the silicon substrate and is adjacent to the first PMOS transistor;
the PNP transistor comprises an N-type buried layer and a low-voltage N-well formed in the N-type buried layer of the PNP transistor;
a third N+ diffusion region, a fifth P+ diffusion region and a sixth P+ diffusion region are formed in the low-voltage N-well of the PNP transistor to serve as a base, an emitter and a collector of the PNP transistor, respectively;
the gate, the source and the N-type buried layer of the first PMOS transistor are connected to the electrostatic terminal through the PNP transistor, wherein:
the base and the emitter of the PNP transistor are shorted to each other and connected to the electrostatic terminal;
the collector of the PNP transistor is shorted to the gate, the source and the first N-type buried layer of the first PMOS transistor.
7. The high-voltage ESD protection device according to claim 5 , further comprising a second PMOS transistor, wherein:
the second PMOS transistor is formed on the P-type epitaxial layer of the silicon substrate and is adjacent to the first PMOS transistor;
the second PMOS transistor has a same structure with the first PMOS transistor;
the gate, the source and the N-type buried layer of the first PMOS transistor are connected to the electrostatic terminal through the second PMOS transistor, wherein:
a gate, a source and an N-type buried layer of the second PMOS transistor are shorted together and connected to the electrostatic terminal;
a drain of the second PMOS transistor is shorted to the gate, the source and the N-type buried layer of the first PMOS transistor.
8. The high-voltage ESD protection device according to claim 5 , wherein one end of the isolation high-voltage P-well is adjacent to the high-voltage N-well of the silicon controlled rectifier and the other end of the isolation high-voltage P-well is adjacent to the N-type buried layer of the first PMOS transistor to isolate the silicon controlled rectifier from the first PMOS transistor.