Substrate processing apparatus and method of manufacturing semiconductor device

1. A substrate processing apparatus comprising:

a processing chamber configured to process a substrate;

a substrate support disposed in the processing chamber;

a first heater and a second heater accommodated in the substrate support and configured to heat the substrate, the first heater being disposed closer to an outer periphery of the substrate support than the second heater;

a shaft supporting the substrate support;

a first wire inserted through the shaft, the first wire comprising a first input-side heater power supply line, a first output-side heater power supply line, a first input-side connection mechanism, a first output-side connection mechanism, a first input-side heater wire having a first end connected to an input terminal of the first heater and a second end connected to the first input-side heater power supply line via the first input-side connection mechanism and a first output-side heater wire having a first end connected to an output terminal of the first heater and a second end connected to the first output-side heater power supply line via the first output-side connection mechanism;

a second wire inserted through the shaft, the second wire comprising a second input-side heater power supply line, a second output-side heater power supply line, a second input-side connection mechanism, a second output-side connection mechanism, a second input-side heater wire having a first end connected to an input terminal of the second heater and a second end connected to the second input-side heater power supply line via the second connection mechanism and a second output-side heater wire having a first end connected to an output terminal of the second heater and a second end connected to the second output-side heater power supply line via the second output-side connection mechanism;

a supporting unit holding the first input-side connection mechanism, the first output-side connection mechanism, the second input-side connection mechanism, and the second output-side connection mechanism,

the supporting unit comprising:

a plate-shaped first partition disposed between the first input-side heater power supply line and the second input-side heater power supply line and between the first output-side heater power supply line and the second output-side heater power supply line, wherein the first partition is spaced apart from an inner wall of the shaft to have a gap between the first partition and the inner wall of the shaft; and

a plate-shaped second partition crossing the plate-shaped first partition, the plate-shaped second partition disposed between the first input-side heater power supply line and the first output-side heater power supply line and between the second input-side heater power supply line and the second output-side heater power supply line, wherein the second partition is spaced apart from the inner wall of the shaft to have a gap between the second partition and the inner wall of the shaft;

a gas supply mechanism installed between the inner wall of the shaft and the plate-shaped first partition wherein a distance between the gas supply mechanism and the both of the first input-side connection mechanism and the first output-side connection mechanism is shorter than a distance between the gas supply mechanism and the both of the second input-side connection mechanism and the second output-side connection mechanism, wherein a gas supplied from the gas supply mechanism flows through the gap between the first partition and the inner wall of the shaft and the gap between the second partition and the inner wall of the shaft; and

a temperature detector connected to the supporting unit and configured to detect a temperature of the supporting unit.

2. The substrate processing apparatus according to claim 1 , further comprising:

a controller configured to control a power supply to each of the first heater and the second heater according to a temperature data detected from the temperature detector.

3. The substrate processing apparatus according to claim 1 , wherein the first input-side heater wire and the first output-side heater wire are made of a material different from that of the first input-side heater power supply line and the first output-side heater power supply line, and the second input-side heater wire and the second output-side heater wire are made of a material different from that of the second input-side heater power supply line and the second output-side heater power supply line, and

wherein first thermal expansion absorption members are installed between the first input-side heater wire and the first input-side heater power supply line and between the first output-side heater wire and the first output-side heater power supply line respectively, and second thermal expansion absorption members are installed between the second input-side heater wire and the second input-side heater power supply line and between the first output-side heater wire and the first output-side heater power supply line respectively.

4. The substrate processing apparatus according to claim 1 , further comprising a controller configured to adjust a power supply to the first heater and the second heater when the temperature of the supporting unit exceeds a predetermined temperature to lower the temperature.

5. The substrate processing apparatus according to claim 4 , wherein the controller is configured to stop the power supply to the first heater and the second heater when the temperature of the supporting unit exceeds the predetermined temperature.

6. The substrate processing apparatus according to claim 1 , further comprising:

a power source configured to supply an electric power to the first heater and the second heater; and

a controller configured to control the power source such that the power supply to the first heater is higher than that to the second heater.

7. The substrate processing apparatus according to claim 1 , wherein the second partition has a width greater than that of the first partition.