Ion beam source

1. Sputtering apparatus comprising:

a non-electrical conducting target;

an ion beam source that produces ions, the ion beam source including at least one grid which when supplied with power emits a beam of the ions, and wherein the target and the ion beam source are disposed in the apparatus relative to each other such that the beam of ions emitted by the grid propagates along a path in the apparatus extending to the target, whereby the target is sputtered by the beam of ions; and

a power supply system operatively connected to the grid and configured to supply pulses of power to the grid such that the ion beam source emits pulses of the beam toward the target, and such that the pulses of power are of a duration which are sufficient to allow the target to be substantially discharged when the pulse is off,

wherein the power supply system includes a circuit configured to switch the apparatus between a first state at which the grid is connected to a DC power supply voltage so that the grid receives DC power and a second state at which the grid is connected to ground, and

the circuit comprises a first FET connected between a DC supply voltage rail and a midpoint, a second FET connected between the midpoint and ground, a pair of diodes connected in series and in parallel with a respective FET, an inductor connected to the midpoint and to a capacitance associated with the grid, and a pulse generator for turning on the FETs alternately, whereby the circuit will substantially retain the grid at rail voltage when a FET is switched on and collapse the grid to ground voltage when the FETs are switched off.

2. Sputtering apparatus as claimed in claim 1 wherein the circuit further includes a detector that detects an arc generated current surge in the circuit and in response to the surge generates a temporary inhibit signal to maintain temporarily the grid at ground.

3. Sputtering apparatus as claimed in claim 2 wherein the detector is configured to detect the rate of change of current and/or voltage supplied to the grid and compare it with a reference or references.

4. An ion beam source as claimed in claim 3 wherein the detector includes a transformer.

5. Sputtering apparatus as claimed in claim 1 wherein the at least one grid comprises a plurality of discrete grids disposed adjacent one another in the ion beam source, and the power supply system includes a plurality of power sources associated with the grids, respectively, such that each of the grids is supplied power by a respective one of the sources, and the pulse generator is a common pulse generator associated with the grids and power sources.

6. Sputtering apparatus as claimed in claim 1 wherein the power supply system further includes a detector that detects a current surge at an output of the system and in response to the surge generates a temporary inhibit signal to maintain temporarily the output at ground.

7. Sputtering apparatus as claimed in claim 6 wherein the detector is configured to detect the rate of change of current and/or voltage at the output and compare it with a reference or references.

8. Sputtering apparatus as claimed in claim 6 wherein the detector includes a transformer.