IP Library Assignment 029405/0169
Patent Assignment
Reel/Frame 029405/0169

Change of Name

Recorded: 2012-12-05 Pages: 4
Assignor
Assignee
SPTS TECHNOLOGIES LIMITED
IMPERIAL PARK, NEWPORT, WALES, NP10 8UJ, UNITED KINGDOM
Covered Properties (20)
Inductively Coupled Plasma Reactor and Process
Patent: 5,683,548 →
Application: 08/605,697 →
Method for Using a Hard Mask for Critical Dimension Growth Containment
Patent: 6,287,975 →
Application: 09/009,369 →
Plasma Reactor with a Deposition Shield
Patent: 6,006,694 →
Application: 09/204,020 →
Plasma Reactor with a Deposition Shield
Patent: 6,360,686 →
Application: 09/382,050 →
Plasma Reactor with a Deposition Shield
Patent: 6,173,674 →
Application: 09/434,092 →
Plasma Reactor with a Deposition Shield
Patent: 6,170,431 →
Application: 09/434,990 →
Plasma Vacuum Substrate Treatment Process and System
Patent: 6,431,113 →
Application: 09/634,988 →
Method for Using a Hard Mask for Critical Dimension Growth Containment
Patent: 6,958,295 →
Application: 09/692,007 →
Deposition Shield for a Plasma Reactor
Patent: 6,521,081 →
Application: 09/881,425 →
Publication: US 2001/0029894
Method for Using a Hard Mask for Critical Dimension Growth Containment
Patent: 6,951,820 →
Application: 10/045,318 →
Publication: US 2002/0132485
Method and Apparatus for Non-Aggressive Plasma-Enhanced Vapor Deposition of Dielectric Films
Patent: 7,056,842 →
Application: 10/902,582 →
Publication: US 2005/0026404
Apparatus and a Method for Controlling the Depth of Etching During Alternating Plasma Etching of Semiconductor Substrates
Patent: 7,892,980 →
Application: 11/319,506 →
Publication: US 2006/0175010
Method of Controlling the Pressure in a Process Chamber
Patent: 7,399,710 →
Application: 11/451,443 →
Publication: US 2006/0281324
Method of Plasma Etching and Carriers for Use in Such Methods
Application: 12/691,785 →
Publication: US 2010/0187202
Method of forming and patterning conformal insulation layer in vias and etched structures
Application: 12/712,339 →
Publication: US 2011/0207323
Apparatus for Chemically Etching a Workpiece
Patent: 9,159,599 →
Application: 12/722,614 →
Publication: US 2010/0230049
Method of Depositing Amorphus Aluminium Oxynitride Layer by Reactive Sputtering of an Aluminium Target in a Nitrogen/Oxygen Atmosphere
Patent: 8,454,805 →
Application: 12/934,276 →
Publication: US 2011/0042200
Ion Beam Source
Patent: 8,968,535 →
Application: 12/967,304 →
Publication: US 2011/0139605
Methods of Depositing SIO2 Films
Application: 12/972,602 →
Publication: US 2011/0318502
Gas Delivery Device
Application: 13/054,033 →
Publication: US 2011/0268891
Related Assignments (8)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Feb 17, 2010
From: TOSSELL, DAVID
To: SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITED
Reel/Frame 023945/0095 →
Assignment of Assignor's Interest Mar 9, 2011
From: MACNEIL, JOHN; BAILEY, ROBERT JEFFREY
To: SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITED
Reel/Frame 025923/0995 →
Assignment of Assignor's Interest Nov 16, 2012
From: TEGAL CORPORATION
To: SPP PROCESS TECHNOLOGY SYSTEMS UK LIMITED
Reel/Frame 029309/0193 →
Security Interest Apr 2, 2015
From: SPTS TECHNOLOGIES LIMITED
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 035364/0295 →
Patent Release Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
Patent Release Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
Patent Release Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
Release of Security Interest Jul 5, 2016
From: JPMORGAN CHASE BANK, N.A.
To: SPTS TECHNOLOGIES LIMITED
Reel/Frame 039257/0026 →