Method of forming and patterning conformal insulation layer in vias and etched structures
Vias are formed in a substrate using an etch process that forms an undercut profile below the mask layer. The vias are coated with a conformal insulating layer and an etch process is applied to the structures to remove the insulating layer from horizontal surfaces while leaving the insulating layers on the vertical sidewalls of the vias. The top regions of the vias are protected during the etchback process by the undercut hardmask.
1 . A method of forming a structure on a substrate, comprising:
a. etching a via or trench pattern on the substrate, the via or trench pattern comprising an overhang on a sidewall; and
b. depositing a dielectric layer coating the sidewall and a portion of the underside of the overhang.
2 . A method as in claim 1 further comprising forming a mask pattern on the substrate before etching the via or trench pattern.
3 . A method as in claim 1 wherein the etching process comprises an isotropic etch for forming the overhang.
4 . A method as in claim 1 wherein the etch process comprises at least one of a plasma etch, a laser etch, a wet etch, ion milling, and reactive ion milling.
5 . A method as in claim 1 wherein the dielectric layer forms a conformal layer coating the overhang and the sidewall.
6 . A method as in claim 1 wherein the dielectric layer provides a sidewall with smoother surface than the sidewall surface after etching.
7 . A method comprising:
a. providing a substrate having a via or trench pattern comprising an overhang on a sidewall;
b. depositing a dielectric layer coating the sidewall and a portion of the underside of the overhang; and
c. anisotropically etching the dielectric layer.
8 . A method as in claim 7 wherein the overhang is formed from a mask layer and an isotropic etch process.
9 . A method as in claim 7 wherein the dielectric layer forms a conformal layer coating the overhang and the sidewall.
10 . A method as in claim 9 wherein the overhang blocks the anisotropic etch from removing the portion of the dielectric layer coating the sidewall.
11 . A method as in claim 7 wherein the dielectric layer deposition process comprises at least one of a chemical vapor deposition, electrochemical deposition, plasma enhanced chemical vapor deposition, atomic layer deposition, nanolayer deposition, spin on deposition, and physical vapor deposition
12 . A method as in claim 7 wherein the dielectric layer comprises a parylene layer.
13 . A method as in claim 7 further comprising depositing a silicon dioxide layer before depositing the dielectric layer.
14 . A method as in claim 7 wherein the anisotropic etch removes the dielectric layer at a top surface of the via or trench pattern.
15 . A method as in claim 7 wherein the overhang is formed from a mask layer and wherein the anisotropic etch removes the dielectric layer at a top surface of the via or trench pattern and a portion of the dielectric layer coating the sidewall of the mask layer.
16 . A method as in claim 7 wherein the overhang is formed from a mask layer and wherein the anisotropic etch removes the dielectric layer coating the sidewall of the mask layer.
17 . A method as in claim 7 wherein the overhang is formed from a mask layer and wherein the anisotropic etch removes the dielectric layer within and a portion below the mask opening.
18 . A method as in claim 7 wherein the anisotropic etch removes the dielectric layer at a top surface and a portion or all at a bottom surface of the via or trench pattern.
19 . A method as in claim 7 wherein the overhang is formed from a mask layer and wherein the anisotropic etch removes the dielectric layer at a top surface of the via or trench pattern, the dielectric layer coating the sidewall of the mask layer, and the dielectric layer at a bottom surface of the via or trench pattern.
20 . A method as in claim 7 wherein the overhang is formed from a mask layer and wherein the anisotropic etch removes the dielectric layer at a top surface of the via or trench pattern, the dielectric layer coating the sidewall of the mask layer, a portion of the dielectric layer below the mask opening, and the dielectric layer at a bottom surface of the via or trench pattern.
21 . A method as in claim 7 wherein the via or trench pattern comprises an anchor on the sidewall, acting as an anchor for a subsequently deposited film.
22 . A method as in claim 21 wherein the anchor comprises one of a scalloped wall, a shape of the via or trench, and a recess on a sidewall.
23 . A method of forming through-silicon interconnects in a silicon substrate, comprising:
a. patterning a mask layer on the silicon substrate;
b. etching the silicon substrate to form at least a via or trench structure with the mask layer forming an overhang on a sidewall of the via or trench structure;
c. depositing a parylene dielectric layer coating the sidewall and a portion of the underside of the overhang;
d. anisotropically etching the parylene dielectric layer from areas not protected by the overhang; and
e. depositing a conducting interconnect film.
24 . A method as in claim 23 wherein the mask layer comprises at least one of a hard mask and a photoresist mask.
25 . A method as in claim 23 wherein etching the silicon substrate comprises an alternating etching and passivating process.
26 . A method as in claim 23 wherein the alternating etching and passivating process forms a scalloped sidewall.
27 . A method as in claim 23 wherein the parylene dielectric layer provides a sidewall with smoother surface than the sidewall surface after etching.
28 . A method as in claim 23 further comprising depositing a silicon dioxide layer before depositing the parylene dielectric layer.
29 . A method as in claim 23 further comprising depositing an adhesion layer before depositing the parylene dielectric layer.
30 . A method as in claim 23 wherein the anisotropic etch removes the parylene dielectric layer at a top surface of the via or trench pattern.
31 . A method as in claim 23 wherein the anisotropic etch removes the parylene dielectric layer at a top surface of the via or trench pattern and a portion of the dielectric layer coating the sidewall of the mask layer.
32 . A method as in claim 23 wherein the anisotropic etch removes the parylene dielectric layer coating the sidewall of the mask layer.
33 . A method as in claim 23 wherein the anisotropic etch removes the parylene dielectric layer anisotropically within and below the mask opening.
34 . A method as in claim 23 wherein the anisotropic etch removes the parylene dielectric layer at a top surface and a portion or all at a bottom surface of the via or trench pattern.
35 . A method as in claim 23 wherein the anisotropic etch removes the parylene dielectric layer at a top surface of the via or trench pattern, the dielectric layer coating the sidewall of the mask layer, and the dielectric layer at a bottom surface of the via or trench pattern.
36 . A method as in claim 23 further comprising depositing a barrier layer before depositing the conducting interconnect film.
37 . A method as in claim 23 further comprising depositing a seed layer before depositing the conducting interconnect film.
38 . A method as in claim 23 wherein etching the silicon substrate forms an anchor on the sidewall.
39 . A method as in claim 23 wherein the parylene layer forms an anchor on the sidewall, acting as an anchor for the conducting interconnect film.
40 . A method as in claim 39 wherein the anchor comprises one of a scalloped wall, a shape of the via or trench, and a recess on a sidewall.