Sulfonyl photoacid generators and photoresists comprising same
View Patent ↗New bis(sulfonyl)imide and tri(sulfonyl)methide photoacid generator compounds (“PAGs”) are provided as well as photoresist compositions that comprise such PAG compounds.
1. A photoresist composition comprising a resin and a photoacid generator compound of the following Formula II:
wherein W, Y are each independently hydrogen, fluorine, optionally substituted fluoroalkyl; optionally substituted fluoroalkoxy; or optionally substituted fluorocarbocyclic aryl;
W′, Y′ are each independently the same as defined for W and Y;
n and n′ are each the same or different and are each a positive integer;
U and U′ are each the same or different and are each a linker; and
R and R′ are each the same or different and are each an optionally substituted carboalicyclic, optionally substituted heteroalicyclic, optionally substituted carbocyclic aryl, or optionally substituted heteroaromatic group;
X + is a counter ion.
2. A photoresist composition of claim 1 wherein X + is a sulfonium or iodonium compound.
3. A photoresist composition of claim 1 wherein X + is of either of the following formulae:
where R 1 to R 5 each independently represents C 1-30 optionally substituted alkyl group or a substituted or unsubstituted carbocyclic aryl group, or any two or more of R 1 , R 2 and R 3 may bond together to form a ring with the sulfur ring.
4. A photoresist composition of claim 1 wherein X + is any of the following groups:
wherein in those formulae P 1 , P 2 , P 3 , P 4 , P 5 , P 6 , and P 7 each independently represent hydrogen or one to five non-hydrogen substituents.
5. A photoresist composition of claim 1 that is selected from:
wherein in those formulae P 1 , P 2 , P 3 , P 4 , P 5 , P 6 , and P 7 each independently represent hydrogen or one to five non-hydrogen substituents.
6. A method for forming a photoresist relief image comprising:
a) applying a coating layer of a photoresist composition of claim 1 on a substrate;
b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.
7. A method for forming a photoresist relief image comprising:
a) applying a coating layer of a photoresist composition of claim 2 on a substrate;
b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.
8. A method for forming a photoresist relief image comprising:
a) applying a coating layer of a photoresist composition of claim 3 on a substrate;
b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.
9. A method for forming a photoresist relief image comprising:
a) applying a coating layer of a photoresist composition of claim 4 on a substrate;
b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.
10. A method for forming a photoresist relief image comprising:
a) applying a coating layer of a photoresist composition of claim 5 on a substrate;
b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.