Photoresists and methods for use thereof
View Patent ↗New photoresists are provided that comprise preferably as distinct components: a resin, a photoactive component and a phenolic component Preferred photoresists of the invention are can be useful for ion implant lithography protocols.
1. A method for providing an ion-implanted semiconductor substrate comprising:
providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,
wherein the photoresist comprises as distinct components (1) a resin wherein less than 15 percent of total repeat units of the resin are aromatic, (2) a photoactive component and (3) a phenolic component; and
applying ions to the substrate.
2. The method of claim 1 wherein the phenolic component is a phenolic resin.
3. The method of claim 1 wherein the photoresist is a chemically amplified positive photoresist and the resin component comprises a resin that comprises less than 50 weight percent aromatic groups.
4. A method for forming a photoresist relief image comprising:
(a) applying on a substrate a photoresist comprising as distinct components (1) a resin wherein less than 15 percent of total repeat units of the resin are aromatic, (2) a photoactive component and (3) a phenolic component; and
(b) exposing the photoresist coating layer to patterned activating radiation.
5. The method of claim 1 wherein the photoresist composition is applied on an inorganic surface.
6. The method of claim 1 wherein the phenolic component is a resin.
7. The method of claim 1 wherein the phenolic component is a polyhydroxystyrene resin.
8. The method of claim 1 wherein the resin comprises photoacid-labile groups.
9. The method of claim 1 wherein the phenolic component does not contain photoacid-labile moieties.
10. The method of claim 4 wherein the photoresist is exposed with sub-200 nm wavelength radiation.
11. The method of claim 4 wherein the phenolic component is a resin.
12. The method of claim 4 wherein the phenolic component is a polyhydroxystyrene resin.
13. The method of claim 4 wherein the phenolic component does not contain photoacid-labile moieties.
14. A method for forming a photoresist relief image comprising:
(a) applying on a substrate a photoresist comprising as distinct components (1) a resin, (2) a photoactive component and (3) a phenolic component that does not contain photoacid-labile moieties; and
(b) exposing the photoresist coating layer to patterned activating radiation.
15. A method for forming a photoresist relief image comprising:
(a) applying on a substrate a photoresist comprising as distinct components (1) a resin, (2) a photoactive component and (3) a phenolic component; and
(b) exposing the photoresist coating layer to patterned sub-200 nm activating radiation.