Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided. The method of manufacturing a semiconductor device includes: (a) loading a substrate into a processing container; (b) forming a metal film on the substrate using a chemical deposition method by supplying a processing gas into the processing container and exhausting the processing gas; (c) forming an aluminum nitride film on the metal film using the chemical deposition method by supplying an aluminum-containing source gas and a nitrogen-containing gas into the processing container and exhausting the aluminum-containing source gas and the nitrogen-containing gas; and (d) unloading the substrate from the processing container after forming the metal film and the aluminum nitride film, wherein the step (b) and the step (c) are continuously performed while maintaining an inside of the processing container to have an oxygen-free atmosphere.
1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a processing container;
(b) forming a metal film including a titanium aluminum nitride film on the substrate using a chemical deposition method by supplying a processing gas into the processing container and exhausting the processing gas;
(c) forming an aluminum nitride film on the metal film using the chemical deposition method by supplying an aluminum-containing source gas and a nitrogen-containing gas into the processing container and exhausting the aluminum-containing source gas and the nitrogen-containing gas; and
(d) unloading the substrate from the processing container after forming the metal film and the aluminum nitride film,
wherein the step (b) and the step (c) are continuously performed while maintaining an inside of the processing container to have an oxygen-free atmosphere;
(e) exposing the metal film by etching the aluminum nitride film under an oxygen-free atmosphere; and
(f) forming an upper film including a metal on the metal film after performing the step (e),
wherein the step (b) comprises forming the titanium aluminum nitride film by one of a chemical vapor deposition method and an atomic layer deposition method using a titanium-containing source gas, the aluminum-containing source gas and the nitrogen-containing gas,
wherein the step (c) comprises forming the aluminum nitride film by the atomic layer deposition method using the aluminum-containing source gas and the nitrogen-containing gas, and
wherein the step (e) and the step (f) are continuously performed under the oxygen-free atmosphere.
2. The method according to claim 1 , wherein a thickness of the aluminum nitride film is 10 nm or less.
3. The method according to claim 1 , wherein a thickness of the aluminum nitride film ranges from 3 nm to 10 nm.
4. The method according to claim 1 , wherein a thickness of the aluminum nitride film ranges from 3 nm to 5 nm.
5. The method according to claim 1 , wherein a thickness of the aluminum nitride film is 3 nm.
6. The method according to claim 1 , wherein the aluminum nitride film is formed so as to cover an entire surface of the metal film.
7. The method according to claim 1 , wherein the metal film and the aluminum nitride film are formed while a temperature of the substrate is maintained.
8. The method according to claim 1 , wherein the titanium aluminum nitride film and the aluminum nitride film are formed while a temperature of the substrate is maintained.