Integrated circuit having a material structured by a projection
View Patent ↗A method of making an integrated circuit including structuring a material. The method includes providing an arrangement of three-dimensional bodies. The material is arranged between the bodies and structured directed radiation. The projection pattern of the three-dimensional bodies is transferred into the material. The structured material connects at least two of the three-dimensional bodies.
1. A material structured by a projection of an arrangement of three-dimensional bodies using directed radiation, wherein a projection pattern of the three-dimensional bodies is transferred into the material and the structured material connects at least two of the three-dimensional bodies.
2. An arrangement comprising:
stack capacitors with a material being structured by a projection of an arrangement of the stack capacitors using directed radiation, wherein a projection pattern of the stack capacitors is transferred into the material and the structured material connects at least two of the stack capacitors.
3. An arrangement comprising:
stack capacitors with a second material being structured by a first material, the first material being structured by a projection of an arrangement of the stack capacitors using directed radiation, wherein a projection pattern of the stack capacitors is transferred into the first material and the structured material connects at least two of the stack capacitors.
4. The structured material of claim 1 , wherein the structured material connects at least two of the three-dimensional bodies by contacting sidewalls of the at least two three-dimensional bodies.
5. The structured material of claim 1 , wherein the three-dimensional bodies comprise tubes.
6. The structured material of claim 5 , wherein the tubes comprise a round or an elliptical cross-section.
7. The structured material of claim 5 , wherein the tubes comprise an overhang.
8. The structured material of claim 1 , wherein the material comprises silicon oxide.
9. The structured material of claim 1 , wherein the material comprises amorphous silicon.
10. The structured material of claim 1 , wherein the material comprises silicon nitride.
11. The structured material of claim 1 , wherein the material comprises a photoresist.
12. The arrangement of claim 2 , wherein the structured material connects at least two of the stack capacitors by contacting sidewalls of the at least two stack capacitors.
13. The arrangement of claim 2 , wherein the material comprises one of silicon oxide, amorphous silicon, silicon nitride, and a photoresist.
14. The arrangement of claim 2 , wherein the stack capacitors comprise tubes.
15. The arrangement of claim 14 , wherein the tubes comprise a round or an elliptical cross-section.
16. The arrangement of claim 14 , wherein the tubes comprise an overhang.
17. The arrangement of claim 3 , wherein the structured material connects at least two of the stack capacitors by contacting sidewalls of the at least two stack capacitors.
18. The arrangement of claim 3 , wherein the first material comprises one of silicon oxide, amorphous silicon, silicon nitride, and a photoresist.
19. The arrangement of claim 3 , wherein the stack capacitors comprise tubes.
20. The arrangement of claim 19 , wherein the tubes comprise a round or an elliptical cross-section.