Data sensing device non-volatile memory
View Patent ↗A non-volatile memory device for measuring a read current of a unit cell is provided. The non-volatile memory device includes a unit cell configured to read or write data, a column switching unit configured to select the unit cell in response to a column selection signal, a sense amplifier controlled by a sense-amplifier enable signal, configured to sense and amplify data that is received from the unit cell through the column switching unit, a first latch unit configured to latch the sense-amplifier enable signal for a predetermined time when a test code signal received from an external part is activated, a column controller configured to output a latch control signal in response to a combination of a column switch-off signal and a column control signal, and a second latch unit configured to control whether or not the column selection signal is latched in response to an activation state of the latch control signal.
1. A data sensing device of a non-volatile memory, the device comprising:
a unit cell configured to store data;
a column switching unit configured to select the unit cell in response to a column selection signal;
a column controller configured to output a latch control signal in response to a column switch-off signal and a column control signal; and
a second latch unit configured to latch the column selection signal in response to the latch control signal and a test code signal,
wherein, when the test code signal is activated and the latch control signal is activated, the column selection signal is latched and output, and
wherein, when the latch control signal is deactivated, the column selection signal is deactivated.
2. The data sensing device according to claim 1 , further comprising:
a first latch unit configured to latch a sense-amplifier enable signal for a predetermined time when the test code signal received from an external part is activated; and
a sense amplifier controlled by the sense-amplifier enable signal, configured to sense and amplify data provided from the unit cell through the column switching unit.
3. The data sensing device according to claim 2 , wherein:
a first current, that is read from an output signal of the sense amplifier during a specific period in which the sense-amplifier enable signal is latched, is sensed; and
a second current, that is read from the output signal of the sense amplifier under a condition that the column switching unit is turned off during the specific period in which the sense-amplifier enable signal is latched, is sensed.
4. The data sensing device according to claim 3 , wherein a read current of the unit cell is measured using a value obtained when the second current is subtracted from the first current.
5. The data sensing device according to claim 2 , further comprising:
a test controller configured to output a read control signal, upon receiving a sensing control signal, the test code signal, and an output signal of the first latch unit; and
a read signal controller configured to control an activation timing point of the sense-amplifier enable signal in response to the read control signal.
6. The data sensing device according to claim 5 , further comprising:
a precharge unit configured to control a precharge operation of the sense-amplifier enable signal upon receiving a precharge signal from the read signal controller.
7. The data sensing device according to claim 6 , further comprising:
a clamping unit configured to control an activation state of the sense-amplifier enable signal upon receiving a clamping signal from the read signal controller.
8. The data sensing device according to claim 7 , wherein the clamping unit comprises:
an NMOS transistor that is coupled between the sense amplifier and the column switching unit and receives the clamping signal from the read signal controller through a gate terminal.
9. The data sensing device according to claim 6 , wherein the precharge unit comprises:
a PMOS transistor that is coupled between a voltage terminal and the sense amplifier and receives the precharge signal from the read signal controller through a gate terminal.
10. The data sensing device according to claim 5 , wherein:
when the test code signal is activated, the read control signal is latched according to an output signal of the first latch unit, and
when the test code signal is activated, the read control signal is operated according to the sensing control signal.
11. The data sensing device according to claim 5 , wherein:
a first current, that is read from an output signal of the sense amplifier during a specific period in which the sense-amplifier enable signal is latched, is sensed; and
a second current, that is read from an output signal of the sense amplifier under a condition that the column switching unit is turned off during the specific period in which the sense-amplifier enable signal is latched, is sensed.
12. The data sensing device according to claim 11 , wherein a read current of the unit cell is measured using a value obtained when the second current is subtracted from the first current.
13. The data sensing device according to claim 5 , wherein:
when each of the column switch-off signal and the column control signal is activated, the latch control signal is deactivated; and
when the column switch-off signal is deactivated and the column control signal is activated, the column controller activates and outputs the latch control signal.
14. The data sensing device according to claim 5 , wherein the test code signal is received from an external part.
15. The data sensing device according to claim 1 , wherein:
when each of the column switch-off signal and the column control signal is activated, the latch control signal is deactivated.
16. The data sensing device according to claim 1 , wherein the column controller is configured to activate and output the latch control signal when the column switch-off signal is deactivated and the column control signal is activated.