Ringback circuit for semiconductor memory device

1. A ringback circuit for a semiconductor memory device, comprising:

a filtering control signal generation unit configured to receive data strobe signal and synchronize a seed signal activated in a pre-amble period of the data strobe signal with the data strobe signal and sequentially generate a plurality of filtering control signals in response to the seed signal; and

a filtering signal output unit configured to generate a filtering signal for filtering the data strobe signal in response to the plurality of filtering control signals and a plurality of burst length (BL) control signals.

2. The ringback circuit of claim 1 , wherein the seed signal comprises a signal derived from a write command.

3. The ringback circuit of claim 1 , wherein the plurality of BL control signals comprise a signal for controlling the BL to be four bits, a signal for controlling the BL to be 8 bits, and a signal for controlling the BL to be 10 bits.

4. The ringback circuit of claim 3 , wherein the signal for controlling the BL to be 10 bits comprises a signal representing use of cyclic redundancy check (CRC).

5. The ringback circuit of claim 4 , wherein the plurality of BL control signals are provided by a mode register set (MRS).

6. The ringback circuit of claim 3 , wherein the filtering signal has a pulse width corresponding to the BL of four bits, 8 bits or 10 bits.

7. The ringback circuit of claim 1 , wherein the seed signal is synchronized with a clock signal and the clock signal has a phase difference with the data strobe signal.

8. The ringback circuit of claim 7 , further comprising a seed signal generation section configured to generate the seed signal in response to the write command and the clock signal.

9. A ringback circuit for a semiconductor memory device, comprising:

a seed signal generation unit configured to generate a seed signal in a pre-amble period of a data strobe signal;

a filtering control signal generation unit configured to receive the data strobe signal and synchronize the seed signal with the data strobe signal and sequentially generate filtering control signals;

a filtering signal output unit configured to generate a filtering signal for filtering the data strobe signal in response to the filtering control signals and first and second burst length (BL) control signals; and

a data strobe signal filtering unit configured to filter and output the filtered data strobe signal according to the filtering signal.

10. The ringback circuit of claim 9 , wherein the seed signal comprises a signal synchronized with a clock signal.

11. The ringback circuit of claim 10 , wherein, when the pre-amble period of the data strobe signal is one clock cycle of the data strobe signal, the seed signal generation unit is configured to activate the seed signal at a clock edge of the clock signal close to a half clock cycle point of the data strobe signal in the pre-amble period of the data strobe signal.

12. The ringback circuit of claim 10 , wherein, when the pre-amble period of the data strobe signal is two clock cycles of the data strobe signal, the seed signal generation unit is configured to activate the seed signal at a clock edge of the clock signal close to a half clock cycle point of the data strobe signal in the pre-amble period of the data strobe signal.

13. The ringback circuit of claim 9 , wherein the filtering control signal generation unit comprises:

a first D flip-flop configured to receive the seed signal and output a first filtering control signal in synchronization with a rising edge of the data strobe signal;

a second D flip-flop configured to receive the first filtering control signal and output a second filtering control signal in synchronization with a falling edge of the data strobe signal;

a third D flip-flop configured to receive the second filtering control signal and output a third filtering control signal in synchronization with a falling edge of the data strobe signal;

a fourth D flip-flop configured to receive the third filtering control signal and output a fourth filtering control signal in synchronization with a falling edge of the data strobe signal; and

a fifth D flip-flop configured to receive the fourth filtering control signal and output a fifth filtering control signal in synchronization with a falling edge of the data strobe signal.

14. The ringback circuit of claim 13 , wherein the filtering signal output unit comprises:

a first activation signal generation section configured to generate a first activation signal according to the first to fourth filtering control signals and the first burst length control signal;

a second activation signal generation section configured to generate a second activation signal according to the fifth filtering control signal and the second burst length control signal; and

a filtering signal output section configured to output the filtering signal according to the first and second activation signals.

15. The ringback circuit of claim 14 , wherein the first BL control signal comprises a signal for controlling a BL to be four bits or 8 bits and the second BL control signal comprises a signal for controlling the BL to be 10 bits.

16. The ringback circuit of claim 15 , wherein the second BL control signal comprises a signal representing use of cyclic redundancy check (CRC).

17. The ringback circuit of claim 15 , wherein the first and second BL control signals are provided by an MRS.

18. The ringback circuit of claim 9 , wherein the filtering signal has a pulse width corresponding to the EL of four bits, 8 bits or 10 bits.

19. The ringback circuit of claim 9 , wherein the seed signal generation unit is further configured to delay a write command and generate the delayed write command as the seed signal in synchronization with a clock signal and the clock signal has a phase difference with respect to the data strobe signal.