Semiconductor memory apparatus
View Patent ↗A semiconductor memory apparatus includes a period control signal generation unit configured to generate a period control signal which is activated after a first time, in response to a programming enable signal, a first write control code generation unit configured to generate first write control codes which are cyclically updated for a second time, in response to the programming enable signal, and update the first write control codes in response to the period control signal, a second write control code generation unit configured to generate a second write control code in response to the programming enable signal, and a data write unit configured to output a first programming current pulse which has a magnitude corresponding to a code combination of the updated first write control codes or a second programming current pulse which has a magnitude corresponding to the second write control code.
1. A semiconductor memory apparatus comprising:
a period control signal generation unit configured to generate a period control signal which is activated after a first time, in response to a programming enable signal;
a first write control code generation unit configured to generate first write control codes which are cyclically updated for a second time, in response to the programming enable signal, and update the first write control codes in response to the period control signal;
a second write control code generation unit configured to generate a second write control code in response to the programming enable signal; and
a data write unit configured to output a first programming current pulse which has a magnitude corresponding to a code combination of the updated first write control codes or a second programming current pulse which has a magnitude corresponding to the second write control code.
2. The semiconductor memory apparatus according to claim 1 , wherein the first write control codes are cyclically updated for a time longer than an activation time of the second write control code.
3. The semiconductor memory apparatus according to claim 1 , wherein the first programming current pulse maintains a current value for the first time, and gradually decreases in current value for the second time after the first time.
4. The semiconductor memory apparatus according to claim 1 , wherein the period control signal generation unit comprises:
an input latch section configured to output a count enable signal and a reset signal in response to the programming enable signal and a reset pulse signal;
a clock generation section configured to generate a clock signal in response to the count enable signal;
a counter section configured to output counting codes which are counted under the control of the count enable signal, the reset signal and the clock signal;
a comparison section configured to activate and output the period control signal when the counting codes reach a predetermined value; and
a latch reset pulse generation section configured to delay the period control signal and output the latch reset pulse signal.
5. The semiconductor memory apparatus according to claim 1 , wherein the data write unit comprises:
a current control section configured to control a current according to a code combination of the first write control codes and the second write control code; and
a current driving section configured to drive the first programming current pulse or the second programming current pulse, with a magnitude corresponding to the current.
6. The semiconductor memory apparatus according to claim 5 , wherein the data write unit further comprises:
a selection section configured to output the programming current pulse driven from the current driving section to bit lines which respectively correspond to a plurality of select signals.
7. A semiconductor memory apparatus comprising:
a configuration code output unit configured to output configuration codes;
a period control signal generation unit configured to generate a period control signal which is activated after a first time corresponding to the configuration codes, in response to a programming enable signal;
a first write control code generation unit configured to generate first write control codes which are cyclically updated for a second time, in response to the programming enable signal, and update the first write control codes in response to the period control signal;
a second write control code generation unit configured to generate a second write control code in response to the programming enable signal; and
a data write unit configured to output a first programming current pulse which has a magnitude corresponding to a code combination of the updated first write control codes or a second programming current pulse which has a magnitude corresponding to the second write control code.
8. The semiconductor memory apparatus according to claim 7 , wherein the first write control codes are cyclically updated for a time longer than an activation time of the second write control code.
9. The semiconductor memory apparatus according to claim 7 , wherein the first programming current pulse maintains a current value for the first time, and gradually decreases in current value for the second time after the first time.
10. The semiconductor memory apparatus according to claim 7 , wherein the period control signal generation unit comprises:
an input latch section configured to output a count enable signal and a reset signal in response to the programming enable signal and a reset pulse signal;
a clock generation section configured to generate a clock signal in response to the count enable signal;
a counter section configured to output counting codes which are counted under the control of the count enable signal, the reset signal and the clock signal;
a comparison section configured to compare the counting codes and the configuration codes, and activate and output the period control signal according to a comparison result; and
a latch reset pulse generation section configured to delay the period control signal and output the latch reset pulse signal.
11. The semiconductor memory apparatus according to claim 7 , wherein the data write unit comprises:
a current control section configured to control a current according to a code combination of the first write control codes and the second write control code; and
a current driving section configured to drive the first programming current pulse or the second programming current pulse, with a magnitude corresponding to the current.
12. The semiconductor memory apparatus according to claim 11 , wherein the data write unit further comprises:
a selection section configured to output the programming current pulse driven from the current driving section to bit lines which respectively correspond to a plurality of select signals.
13. The semiconductor memory apparatus according to claim 7 , wherein the configuration code output unit comprises:
a latch section configured to store the configuration codes.
14. The semiconductor memory apparatus according to claim 7 , wherein the configuration codes are signals which are outputted from a mode register set.
15. A semiconductor memory apparatus comprising:
a data write unit configured to output a first programming current which has a first period of supplying the largest first programming current, and a second period of supplying a decreasing first programming current;
a period control signal generation unit configured to generate a period control signal which control a duration of the first period;
a first write control code generation unit configured to generate a first programming control code which control the first programming current; and
a configuration code output unit configured to output a configuration code to be compared with an internal code of the period control signal generation unit.
16. The semiconductor memory apparatus according to claim 15 , wherein the internal code of the period control signal generation unit is an output of a counter logic in the period control signal generation unit.