Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
View Patent ↗This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
1. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions with a vapor of Me 2 (HNNMe 2 )Si—Si(HNNMe 2 )Me 2 .
2. The method of claim 1 , further comprising forming said vapor by volatilizing Me 2 (HNNMe 2 )Si—Si(HNNMe 2 )Me 2 from a liquid phase.
3. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions with a vapor of Si(HNNMe 2 ) 4 .
4. The method of claim 3 , further comprising forming said vapor by volatilizing Si(HNNMe 2 ) 4 from a solid phase.
5. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions with a vapor of (HNBu t ) 2 (HNNMe 2 )Si—Si(HNNMe 2 )(HNBu t ) 2 .
6. The method of claim 5 , further comprising forming said vapor by volatilizing (HNBu t ) 2 (HNNMe 2 )Si—Si(HNNMe 2 )(HNBu t ) 2 from a solid phase.
7. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions with a vapor of a compound selected from compounds of the formula:
wherein R 1 , R 2 , R 3 , and R 4 may be the same as or different from one another and are independently selected from the group consisting of H, C 1 -C 7 alkyl, aryl, and C 3 -C 6 cycloalkyl, or R 1 and R 2 together may form a C 3 -C 6 heterocyclic functional group with N, or R 3 and R 4 together may form a C 3 -C 6 heterocyclic functional group with N, and wherein X 1 , X 2 , Y 1 , and Y 2 may be the same as or different from one another and are independently selected from the group consisting of H, C 1 -C 7 alkyl, alkylamino, dialkylamino, and R 1 R 2 NNH—, wherein R 1 and R 2 are as described above, and wherein R 1 , R 2 , R 3 , R 4 , X 1 , X 2 , Y 1 , and Y 2 are not all methyl.
8. The method of claim 7 , wherein the compounds include functional groups that are symmetrically distributed in relation to the Si—Si bond.