Substrate comprising alloy film of metal element having barrier function and metal element having catalytic power
View Patent ↗A layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, a pretreatment technique making it possible to form an ultrafine wiring and form a thin seed layer of uniform film thickness and a substrate including a thin seed layer formed with a uniform film thickness by electroless plating by using the aforementioned technique. A substrate in which an alloy film of one or more metal elements, having a barrier function and a metal element or metal elements, having catalytic power with respect to electroless plating is formed by chemical vapor deposition (CVD) on a base to a film thickness of 0.5 nm to 5 nm with a content ratio of the one or more metal element having a barrier function from 5 to 90 at. %.
1. A substrate comprising an alloy film of a thickness of from 0.5-5 nm formed by chemical vapor deposition on a base, the alloy film comprising at least one metal having a barrier function and at least one metal having a catalytic ability with respect to electroless plating, the at least one metal having a barrier function being selected from the group consisting of tungsten, molybdenum and niobium and the at least one metal having a catalytic ability being selected from the group consisting of ruthenium and platinum and the content of the at least one metal having a barrier function in the alloy film is 5-90 at. %.
2. The substrate according to claim 1 , wherein the at least one metal having a catalytic ability is ruthenium.
3. The substrate according to claim 1 , wherein the at least one metal having a catalytic ability is platinum or both of platinum and ruthenium.
4. The substrate according to claim 1 , wherein the alloy film is formed to a thickness of 1 to 3 nm.
5. The substrate according to claim 1 , wherein the content ratio of the at least one metal having a barrier function is from 5 to 80 at. %.
6. The substrate according to claim 1 , additionally comprising a copper seed layer formed by electroless copper plating on the alloy film.
7. The substrate according to claim 6 , wherein a damascene copper wiring is further formed on the copper seed layer.
8. The substrate according to claim 7 , wherein a semiconductor wafer is used as a base.
9. The substrate according to claim 1 , additionally comprising a damascene wiring having via trenches with a wiring width of no greater than 50 nm formed in the base and a copper seed layer provided on the alloy film.
10. A method of forming a substrate comprising an alloy film provided on a base, the method comprising the step of forming the alloy film of a thickness of from 0.5-5 nm by chemical vapor deposition on the base, the alloy film comprising at least one metal having a barrier function and at least one metal having a catalytic ability with respect to electroless plating, the at least one metal having a barrier function being selected from the group consisting of tungsten, molybdenum and niobium and the at least one metal having a catalytic ability being selected from the group consisting of ruthenium and platinum and the content of the at least one metal having a barrier function in the alloy film is 5-90 at. %.