Plasma processing method

1. In a plasma processing method of dry-etching a magnetic film having a thickness of 200 nm to 500 nm,

said plasma processing method of dry-etching a sample having a multilayered film formed on said magnetic film, said multilayered film consisting of a resist film, a BARC film underlying the resist film, a Ta film, which is a separate film from the BARC film, underlying said BARC film, a Cr film underlying said Ta film, and an Al 2 O 3 film underlying said Cr film,

wherein the dry-etching of said sample comprises:

dry-etching said BARC film using the resist film as a mask;

dry-etching said Ta film using the resist film as a mask, and using the BARC film etched by the dry-etching of said BARC film as a mask;

dry-etching said Cr film using the Ta film etched by the dry-etching of said Ta film as a mask;

dry-etching said Al 2 O 3 film using the Ta film etched by the dry-etching of said Ta film as a mask, and using the Cr film etched by the dry-etching of said Cr film as a mask;

dry-etching said magnetic film using the Cr film etched by the dry-etching of said Cr film as a mask, and using the Al 2 O 3 film etched by the dry-etching of said Al 2 O 3 film as a mask;

wherein the dry-etching of said magnetic film is performed using Cl 2 gas,

wherein the dry-etching of said Al 2 O 3 film is performed using a gas consisting of Cl 2 gas and BCl 3 gas,

wherein the dry-etching of said Cr film is performed using a as consisting of Cl 2 gas, O 2 gas and Ar gas,

wherein the dry-etching said Ta film is performed using a gas consisting Cl 2 gas and BCl 3 , gas, and

wherein the dry-etching of said BARC film is performed using a gas consisting of Cl 2 gas and O 2 gas.

2. The method of claim 1 , wherein said magnetic film is any one of NiFe, CoFe and CoNiFe films.

3. The method of claim 1 , wherein the magnetic film is a NiFe magnetic film.

4. The method of claim 1 , wherein said Cr film is dry-etched using only the Ta film as a mask and the BARC film as a mask.

5. The method of claim 1 , wherein said Cr film is dry-etched after the resist film has been removed.

6. The method of claim 1 , wherein in said dry-etching of said Cr film, said BARC film is an uppermost film of the sample.

7. The method of claim 1 , wherein the Ta film is directly in contact with the BARC film.

8. The method of claim 1 , wherein the dry-etching of the Cr film provides an etched Cr film that has been etched vertically.

9. In a plasma processing method of dry-etching a magnetic film having a thickness of 200 nm to 500 nm,

said plasma processing method of dry-etching a sample having a multilayered film formed on said magnetic film, said multilayered film consisting of a resist film, a BARC film underlying the resist film, a TiN film, which is a separate film from the BARC film, underlying said BARC film, a Cr film underlying said TiN film, and an Al2O3 film underlying said Cr film,

wherein the dry-etching of said sample comprises:

dry-etching said BARC film using the resist film as a mask;

dry-etching said TiN film using the resist film as a mask, and using the BARC film etched by the dry-etching of said BARC film as a mask;

dry-etching said Cr film using the TiN film etched by the dry-etching of said TiN film as a mask;

dry-etching said Al 2 O 3 film using the TiN film etched by the dry-etching of the TiN film as a mask, and using the Cr film etched by the dry-etching of said Cr film as a mask;

dry-etching said magnetic film using the Cr film etched by the dry-etching of the Cr film as a mask, and using the Al 2 O 3 film etched by the dry-etching of said Al 2 O 3 film as a mask;

wherein the dry-etching of said magnetic film is performed using Cl 2 gas, wherein the dry-etching of said Al 2 O 3 film is performed using a gas consisting of Cl 2 gas and BCl 3 gas,

wherein the dry-etching of said Cr film is performed using a gas consisting of Cl 2 gas, O 2 gas and Ar gas,

wherein the dry-etching of said TiN film is performed using a gas consisting of Cl 2 gas and BCl 3 gas, and

wherein the dry-etching of said BARC film is performed using a gas consisting of Cl 2 gas and O 2 gas.

10. The method of claim 9 , wherein said Cr film is dry-etched using only the TiN film as a mask and the BARC film as a mask.

11. The method of claim 9 , wherein said Cr film is dry-etched after the resist film has been removed.

12. The method of claim 9 , wherein in said dry-etching of said Cr film, said BARC film is an uppermost film of the sample.

13. The method of claim 9 , wherein the TiN film is directly in contact with the BARC film.

14. The method of claim 9 , wherein said magnetic film is any one of NiFe, CoFe and CoNiFe films.

15. The method of claim 9 , wherein the magnetic film is a NiFe magnetic film.

16. The method of claim 9 , wherein the dry-etching of the Cr film provides an etched Cr film that has been etched vertically.