Method of manufacturing semiconductor device and substrate processing apparatus
A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film at a higher film-forming rate. The method includes loading a substrate into a processing chamber; simultaneously starting a supply of a first processing gas and a second processing gas to form a film on the substrate, simultaneously stopping the supply of the first and second processing gas; removing the remaining first and second processing gas from the processing chamber; supplying the second processing gas into the processing chamber without supplying the first processing gas; removing the second processing gas starting and then stopping a supply of the first processing gas into the processing chamber without supplying the second processing gas; removing the first processing gas; and unloading the substrate from the processing chamber.
1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a processing chamber;
(b) simultaneously starting a supply of a first processing gas and a second processing gas into the processing chamber to form a film on the substrate and simultaneously stopping the supply of the first processing gas and the second processing gas;
(c) removing the first processing gas and the second processing gas remaining after performing the step (b) from the processing chamber;
(d) supplying the second processing gas into the processing chamber without supplying the first processing gas;
(e) removing the second processing gas remaining after performing the step (d) from the processing chamber;
(f) starting and then stopping a supply of the first processing gas into the processing chamber without supplying the second processing gas;
(g) removing the first processing gas remaining after performing the step (f) from the processing chamber; and
(h) unloading the substrate from the processing chamber.
2. The method according to claim 1 , wherein the steps (b) through (g) are performed in order a predetermined number of times to form a predetermined film.
3. The method according to claim 1 , wherein the first processing gas includes a titanium-containing gas, the second processing gas includes a nitrogen-containing gas, and the film formed on the substrate includes a titanium nitride.
4. The method of according to claim 1 , wherein the first processing gas includes a metal-containing gas.
5. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a processing chamber;
(b) starting a supply of a first processing gas containing a first element into the processing chamber and stopping the supply of the first processing gas without supplying a second processing gas containing a second element;
(c) removing the first processing gas remaining after performing the step (b) from the processing chamber
(d) simultaneously starting a supply of the first processing gas and the second processing gas into the processing chamber and simultaneously stopping the supply of the first processing gas and the second processing gas to react the second processing gas with the first processing gas;
(e) removing the first processing gas and the second processing gas remaining after performing the step (d) from the processing chamber;
(f) supplying the second processing gas into the processing chamber without supplying the first processing gas;
(g) removing the second processing gas remaining after performing the step (f) from the processing chamber; and
(h) unloading the substrate from the processing chamber.
6. The method according to claim 5 , wherein the steps (b) through (g) are performed in order a predetermined number of times to form a predetermined film.
7. The method according to claim 5 , wherein the first element includes titanium and the second element includes nitrogen.
8. The method according to claim 5 , wherein the first processing gas includes a titanium-containing gas and the second processing gas includes a nitrogen-containing gas.
9. The method of according to claim 5 , wherein the first processing gas includes a metal-containing gas.