IP Library Granted Patent US 8,927,190
Granted Patent B2
US 8,927,190 · App. 13/013,780 · Granted Jan 6, 2015

Photoresist comprising nitrogen-containing compound

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Quick Facts
Patent No.
US 8,927,190
App. No.
13/013,780
Granted
Jan 6, 2015
Kind
B2
Abstract

New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups.

Claims (51)

1. A photoresist composition comprising:

(a) one or more resins;

(b) one or more photoacid generator compounds; and

(c) one or more nitrogen-containing compounds that each comprise 1) two or more hydroxyl substituents and 2) one or more photoacid-labile ester groups and/or photoacid-labile acetal groups, wherein the one or more of the nitrogen-containing compounds comprise one or more of the following structures:

2. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 1 on a substrate;

(b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

3. A photoresist composition comprising:

(a) one or more resins;

(b) one or more photoacid generator compounds; and

(c) one more nitrogen-containing compounds that each comprise 1) two or more hydroxyl substituents and 2) one or more photoacid-labile ester groups and/or photoacid-labile acetal groups, wherein one or more of the nitrogen-containing compounds correspond to the following Formula (IIB):

wherein in Formula (IIB) R 1 and R 2 are the same or different and at least one of R 1 and R 2 is other than hydrogen, and together R 1 and R 2 comprise at least two hydroxyl groups, or R 1 and R 2 may be taken together to form a ring where the ring (including substituents thereof) comprises at least 2 hydroxy groups; and R 1′ , R 2′ and R 3′ each independently represent an optionally substituted straight, branched or cyclic group of 1 to 30 carbon atoms.

4. A photoresist composition comprising:

(a) one or more resins;

(b) one or more photoacid generator compounds; and

(c) one more nitrogen-containing compounds represented by one of the following Formula (I):

wherein R 1 and R 2 are the same or different and at least one of R 1 and R 2 is other than hydrogen, and

wherein R 1 comprises at least two hydroxyl groups, or R 2 comprises at least two hydroxyl groups, or R 1 and R 2 are taken together to form a ring where the ring (including substituents thereof) comprises at least 2 hydroxy groups; and

X comprises a photoacid-labile group.

5. The photoresist composition of claim 4 wherein R 1 comprises at least two hydroxyl groups.

6. The photoresist composition of claim 4 wherein R 2 comprises at least two hydroxyl groups.

7. The photoresist composition of claim 4 wherein R 1 is hydrogen and R 2 is a non-hydrogen group that comprises at least two hydroxyl groups.

8. The photoresist composition of claim 4 wherein R 1 and R 2 are taken together to form a cyclic structure.

9. The photoresist composition of claim 4 wherein one or more of the nitrogen-containing compounds correspond to the following Formula (IIC):

wherein R 1 , R 2 and R 3 each independently represent an optionally substituted straight, branched or cyclic group of 1 to 30 carbon; R 4 represents hydrogen or a straight, branched or cyclic group of 1 to 30 carbon; m1, m2 and m3 are each independently an integer of 0 to 30; n1, n2 and n3 are each independently an integer of 0 or 1; at least two among n1, n2 and n3 are 1.

10. The photoresist composition of claim 4 wherein one or more of the nitrogen-containing compounds correspond to the following Formula (IID):

wherein R 1 , R 2 and R 3 each independently represent a straight, branched or cyclic group of 1 to 30 carbon; R 4 represents hydrogen or an optionally substituted straight, branched or cyclic group of 1 to 30 carbon; n is an integer of 1 to 30; and n is a positive integer e.g. from 1 to 20.

11. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 4 on a substrate;

b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

12. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 5 on a substrate;

b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

13. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 6 on a substrate;

b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

14. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 7 on a substrate;

b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

15. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 8 on a substrate;

b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

16. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 9 on a substrate;

b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

17. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 10 on a substrate;

b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

18. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 3 on a substrate;

(b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

Assignments (3)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS LLC
To: DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC
Reel/Frame 069272/0383 →