Methods to prepare silicon-containing films
View Patent ↗Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.
1. A method for forming a solid dielectric film on at least one surface of a substrate, the method comprising:
providing the at least one surface of the substrate in a reaction chamber; and
introducing into the reaction chamber a silicon precursor to form the solid dielectric film comprising at least one precursor selected from the group of precursors having the following Formulas I, II, and III:
where R, R 1 , and R 2 in Formulas I, II, and III are each independently an alkyl group, an aryl, an acyl group, or combinations thereof;
introducing into the reaction chamber at least one source comprising an oxygen source wherein the at least one precursor and the at least one source react to form the solid dielectric film on the at least one surface of the substrate; and
wherein the silicon precursor comprises di-tert-pentoxysilane.
2. The method of claim 1 wherein at least one source further comprises a nitrogen source.
3. The method of claim 1 wherein the forming is at least one selected from cyclic chemical vapor deposition, plasma enhanced chemical vapor deposition, or atomic layer deposition.
4. The method of claim 1 wherein the silicon precursor comprises di-tert-butoxysilane.
5. The method of claim 2 wherein the oxygen source comprises oxygen.
6. The method of claim 2 wherein the oxygen source comprises ozone.
7. The method of claim 1 using a thermal CVD process, wherein the dielectric film comprises up to about 30 atomic weight % nitrogen as measured by XPS.
8. The film produced from the method of claim 1 having the composition Si a O b N c C d H e B f where a is from 10-50 at %, b is from 10 to to 70 at %, c is from 0 to 30 at %, d is from 0 to 30 at %, e is from 0 to 50 at %, and f is from 0 to 30 at %.
9. A device manufactured using the process of claim 1 selected from the group consisting of: optical devices, magnetic information storages, coatings on a supporting material or substrate, microelectromechanical systems (MEMS), nanoelectromechanical systems, thin film transistor (TFT), and liquid crystal displays (LCD).
10. A method of forming a solid dielectric film comprising silicon and oxygen via an atomic layer deposition process, the method comprising the steps of:
a. placing a substrate into an ALD reactor;
b. introducing into the ALD reactor a silicon precursor comprising at least one selected from the group of precursors having the following Formulas I, II, and III:
where R, R 1 , and R 2 in Formulas I, II, and III are each independently an alkyl group, an aryl, an acyl group, or combinations thereof;
c. purging the ALD reactor with a gas;
d. introducing an oxygen source into the ALD reactor;
e. purging the ALD reactor with the gas;
f. repeating the steps b through d until a desired thickness of the solid dielectric film is obtained wherein the dielectric film comprises from up to about 30 atomic weight % nitrogen as measured by XPS; and
wherein the silicon precursor comprises di-tert-pentoxysilane.
11. The method of claim 10 wherein a nitrogen source thereof is introduced into the ALD reactor.