Method of making a multicomponent film
View Patent ↗Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
1. A method of depositing a multicomponent film on at least a portion of a substrate comprising steps of:
(a) contacting the substrate with an In precursor or a precursor solution comprising the In precursor to react with the substrate to provide a first coating layer comprising In;
(b) rinsing at least a portion of the first coated layer with a rinse solution to remove any unreacted In precursor;
(c) contacting the first coating layer comprising In with a Te precursor or a precursor solution comprising the Te precursor, wherein at least a portion of the Te precursor reacts with the In comprised therein to provide a second coating layer comprising In and Te;
(d) rinsing at least a portion of the second coating layer with rinse solution to remove any unreacted Te precursor;
(e) contacting the second coating layer comprising In and Te with a Sb precursor or a precursor solution comprising the Sb precursor, wherein at least a portion of the Sb precursor reacts with at least a portion of the In and Te comprised therein to provide a third coating layer comprising In, Sb, and Te;
(f) rinsing at least a portion of the third coating layer with rinse solution to remove any unreacted Sb precursor,
(g) contacting the third coating layer comprising In, Te, and Sb with a Te precursor or a precursor solution comprising the Te precursor to react with the third coating layer to provide a fourth coating layer comprising In, Te, and Sb; and
(h) rinsing at least a portion of the fourth coating layer with rinse solution to remove any unreacted Te precursor,
(i) contacting the fourth coating layer comprising In, Te, and Sb with a Ag precursor or a precursor solution comprising the Ag precursor, wherein at least a portion of the Ag precursor reacts with at least a portion of the In, Te, and Sb comprised therein to provide a fifth coating layer comprising In, Te, Sb and Ag;
(j) rinsing at least a portion of the fifth coating layer with rinse solution to remove any unreacted Ag precursor;
(k) contacting the fifth coating layer comprising In, Te, Sb and Ag with a Te precursor or a precursor solution comprising the Te precursor to react with the fifth coating layer to provide a sixth coating layer comprising In, Te, Sb and Ag; and
(l) rinsing at least a portion of the sixth coating layer with rinse solution to remove any unreacted Te precursor,
wherein steps (a) through (l) are repeated to form a number of coating layers to provide the film.
2. The method of claim 1 wherein the Ag precursor comprises a compound having the following formula: MX n wherein M is Ag; X is a nucleophilic group selected from the group consisting of OR (alkoxy), F (fluorine), Cl (chlorine), Br (bromine), NR 2 (amino), CN (cyano), OCN (cyanate), SCN (thiocyanate), diketonate, carboxylic groups and mixtures thereof; and n=1 to 3.
3. The method of claim 1 wherein the In precursor comprises a compound having the following formula: MX n wherein M is In; X is a nucleophilic group selected from the group consisting of OR (alkoxy), F (fluorine), Cl (chlorine), Br (bromine), NR 2 (amino), CN (cyano), OCN (cyanate), SCN (thiocyanate), diketonate, carboxylic groups and mixtures thereof; and n=1 to 3.
4. The method of claim 1 wherein the Te precursor comprises a silyltellurium selected from the group consisting of disilyltellurium having a general formula: (R 1 R 2 R 3 Si) 2 Te; alkylsilyltellurium having a general formula: (R 1 R 2 R 3 Si)TeR 4 ; and mixtures thereof wherein R 1 , R 2 , R 3 , and R 4 are each independently selected from the group consisting of: hydrogen; linear, branched, or unsaturated C 1-10 alkyl groups; C 4-10 cyclic alkyl groups; and C 4-12 aromatic groups.
5. The method of claim 1 wherein the Sb precursor comprises a compound having the following formula: MX n wherein M is Sb; X is a nucleophilic group selected from the group consisting of OR (alkoxy), F (fluorine), Cl (chlorine), Br (bromine), NR 2 (amino), CN (cyano), OCN (cyanate), SCN (thiocyanate), diketonate, carboxylic groups and mixtures thereof; and n=3 to 5.
6. The method of claim 1 wherein the at least one of the Ag, the In, the Te, and the Sb precursors in the contacting steps comprises a precursor solution.
7. The method of claim 6 wherein the precursor solution comprises the precursor and at least one solvent selected the group consisting of a hydrocarbon, a halogenated hydrocarbon, and an ether.
8. The method of claim 7 wherein the solvent comprises a hydrocarbon.
9. The method of claim 8 wherein the solvent is at least one selected from the group consisting of hexane, octane, toluene, and combinations thereof.
10. The method of claim 6 wherein the amount of solvent in the precursor solution ranges from about 0.01 to about 90 weight percent.