Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
View Patent ↗An electronic device includes a semiconductor layer, a primary junction in the semiconductor layer, a lightly doped region surrounding the primary junction and a junction termination structure in the lightly doped region adjacent the primary junction. The junction termination structure has an upper boundary, a side boundary, and a corner between the upper boundary and the side boundary, and the lightly doped region extends in a first direction away from the primary junction and normal to a point on the upper boundary by a first distance that is smaller than a second distance by which the lightly doped region extends in a second direction away from the primary junction and normal to a point on the corner. At least one floating guard ring segment may be provided in the semiconductor layer outside the corner of the junction termination structure. Related methods are also disclosed.
1. An electronic device, comprising:
a semiconductor layer having a first conductivity type and having a first surface;
a primary junction in the semiconductor layer at the first surface thereof;
a lightly doped region adjacent the primary junction and having a second conductivity type that is opposite the first conductivity type, the lightly doped region not extending beyond an area defined by the first surface; and
a junction termination structure in the lightly doped region, wherein the junction termination structure has, when viewed in a plane of the first surface, an upper boundary, a side boundary, and a corner region between the upper boundary and the side boundary;
wherein the lightly doped region extends in a first direction away from the primary junction and normal to a point on the upper boundary by a first distance that is smaller than a second distance by which the lightly doped region extends in a second direction away from the primary junction and normal to a point on the corner region.
2. The electronic device of claim 1 , wherein the junction termination structure comprises a guard ring that is adjacent to and spaced apart from the primary junction, wherein the guard ring has the second conductivity type and has a doping concentration that is higher than a doping concentration of the lightly doped region.
3. The electronic device of claim 1 , wherein the semiconductor layer comprises silicon carbide.
4. The electronic device of claim 1 , wherein the corner of the junction termination structure is in an upper left corner of the electronic device when the upper boundary of the junction termination structure is positioned above the primary junction and the side boundary of the junction termination structure is positioned to the left of the primary junction.
5. The electronic device of claim 1 , wherein the lightly doped region extends in the first direction away from the primary junction and normal to the point on the upper boundary by a distance of about 10 micrometers and extends in the second direction away from the primary junction and normal to the point on the corner by a distance of at least about 20 micrometers.
6. The electronic device of claim 1 , wherein the first conductivity type is one of n-type or p-type, and the second conductivity type is one of p-type or n-type.
7. The electronic device of claim 1 , wherein the electronic device comprises four corner regions, and wherein the lightly doped region extends into each of the four corner regions.
8. The electronic device of claim 1 , wherein the corner of the lightly doped region has a first radius of curvature that is less than a second radius of curvature of the corner of the junction termination structure.
9. The electronic device of claim 1 , wherein the junction termination structure is entirely within the lightly doped region.
10. An electronic device, comprising:
a semiconductor layer having a first conductivity type and having a first surface;
a primary junction in the semiconductor layer at the first surface thereof;
a lightly doped region adjacent the primary junction and having a second conductivity type that is opposite the first conductivity type; and
a junction termination structure in the lightly doped region, wherein the junction termination structure has, when viewed in a plane of the first surface, an upper boundary, a side boundary, and a corner region between the upper boundary and the side boundary;
wherein the lightly doped region extends in a first direction away from the primary junction and normal to a point on the upper boundary by a first distance that is smaller than a second distance by which the lightly doped region extends in a second direction away from the primary junction and normal to a point on the corner region
wherein the junction termination structure comprises a guard ring that is adjacent to and spaced apart from the primary junction, wherein the guard ring has the second conductivity type and has a doping concentration that is higher than a doping concentration of the lightly doped region;
wherein the semiconductor layer comprises silicon carbide; and
wherein the upper boundary of the junction termination structure is aligned in a <11-20> crystallographic direction of the silicon carbide semiconductor layer and the side boundary of the junction termination structure is aligned in a <10-10> crystallographic direction of the silicon carbide semiconductor layer.
11. An electronic device, comprising:
a semiconductor layer having a first conductivity type and having a first surface;
a primary junction in the semiconductor layer at the first surface thereof;
a lightly doped region adjacent the primary junction and having a second conductivity type that is opposite the first conductivity type; and
a junction termination structure in the lightly doped region, wherein the junction termination structure has, when viewed in a plane of the first surface, an upper boundary, a side boundary, and a corner region between the upper boundary and the side boundary;
wherein the lightly doped region extends in a first direction away from the primary junction and normal to a point on the upper boundary by a first distance that is smaller than a second distance by which the lightly doped region extends in a second direction away from the primary junction and normal to a point on the corner region;
wherein the electronic device further comprises at least one floating guard ring segment between the corner of the junction termination structure and a corner of the device, wherein the corner of the junction termination structure is between the floating guard ring segment and the primary junction.
12. The electronic device of claim 11 , wherein the floating guard ring segment comprises an implanted region in the semiconductor layer that is isolated from the junction termination structure.
13. The electronic device of claim 11 , further comprising a plurality of mutually isolated floating guard ring segments between the corner of the junction termination structure and the corner of the device.
14. The electronic device of claim 11 , wherein the floating guard ring segment does not extend completely around the primary junction.
15. The electronic device of claim 11 , wherein the floating guard ring segment has a radius of curvature about the same as a radius of curvature of the corner of the junction termination structure.
16. An electronic device, comprising:
a semiconductor layer having a first conductivity type and having a first surface;
a primary junction in the semiconductor layer at the first surface thereof;
a lightly doped region having a second conductivity type opposite the first conductivity type at the first surface of the semiconductor layer and adjacent the primary junction, the lightly doped region not extending beyond an area defined by the first surface; and
a junction termination structure entirely within the lightly doped region;
wherein the junction termination structure has, when viewed in a plane of the first surface, an upper boundary, a side boundary, and a corner between the upper boundary and the side boundary and the lightly doped region has, when viewed in a plane of the first surface, an upper boundary, a side boundary, and a corner between the upper boundary and the side boundary; and
wherein the corner of the lightly doped region has a first radius of curvature that is less than a second radius of curvature of the corner of the junction termination structure.
17. A method of forming an electronic device, comprising:
providing a semiconductor layer having a first conductivity type and having a first surface;
providing a primary junction in the semiconductor layer at the first surface thereof; and
providing a lightly doped region adjacent to the primary junction at the first surface of the semiconductor layer and having a second conductivity type opposite the first conductivity type, the lightly doped region not extending beyond an area defined by the first surface; and
providing a junction termination structure in the lightly doped region; wherein the junction termination structure has, when viewed in a plane of the first surface, an upper boundary, a side boundary, and a corner between the upper boundary and the side boundary; and
wherein the lightly doped region extends in a first direction away from the primary junction and normal to a point on the upper boundary by a first distance that is smaller than a second distance by which the lightly doped region extends in a second direction away from the primary junction and normal to a point on the corner.