Method for forming pad in wafer with three-dimensional stacking structure

1. A method for forming a pad in a wafer with a three-dimensional stacking structure, comprising:

bonding a device wafer and a handling wafer, wherein the device wafer comprises an Si substrate;

thinning a back side of the Si substrate;

depositing an anti-reflective layer on the thinned back side of the Si substrate;

depositing a back side dielectric layer on the anti-reflective layer;

forming vias that pass through the anti-reflective layer and the back side dielectric layer and contact back sides of super contacts which are formed on the Si substrate and

forming a pad on the back side dielectric layer, wherein the pad is electrically connected to the vias.

2. The method according to claim 1 , wherein the device wafer comprises an image sensor region in which an image sensor is formed and a semiconductor circuit region in which a semiconductor circuit is formed.

3. The method according to claim 2 ,

wherein the image sensor region comprises photodiodes, and an interlayer dielectric layer and a plurality of metal wiring lines which are formed in a direction facing a front side on which the handling wafer is positioned, and

wherein collection of light is implemented from back sides of the photodiodes.

4. The method according to claim 2 , wherein the semiconductor circuit region is formed in such a way as to include an interlayer dielectric layer and multi-layered metal wiring lines which are sequentially formed in the direction facing the front side on which the handling wafer is positioned and in such a manner that the super contacts pass through the Si substrate to ensure contact between the metal wiring lines and the Si substrate.

5. The method according to claim 1 , wherein the Si substrate has a thickness of 2 μm to 6 μm after it is thinned.

6. The method according to claim 1 , wherein the anti-reflective layer comprises an oxynitride layer or an oxide-nitride-oxide layer.

7. The method according to claim 6 , wherein the anti-reflective layer is deposited to a thickness identical to or less than 500 Å.

8. The method according to claim 1 , wherein the back side dielectric layer is deposited to a thickness of 1,000 Ř5,000 Å.

9. The method according to claim 1 , wherein forming the vias comprises:

performing a photolithographic process and defining via holes which pass through the backside dielectric layer and the anti-reflective layer;

filling a metallic material in the via holes; and

planarizing a resultant structure by performing a CMP (chemical mechanical polishing) process.

10. The method according to claim 1 , design rules of the super contacts and the vias are respectively 0.7 μm/0.7 μm˜3.0 μm/5.0 μm [width/spacing] and 0.1 μm/0.1 μm˜0.5 μm/0.5 μm [width/spacing].

11. The method according to claim 9 , wherein the via holes are filled with tungsten (W).

12. The method according to claim 1 , wherein the pad is formed using aluminum (Al).

13. The method according to claim 1 , wherein, the method further comprises

opening the pad.

14. The method according to claim 13 , wherein the process of opening the pad is implemented in such a manner that a pad opening via is defined by performing a photolithographic process.

15. The method according to claim 1 , wherein the method further comprises:

forming optical filters for transmitting light of a specified band and forming microlenses for focusing light on the optical filters, in order to improve light collection capability of the photodiodes for back side illumination (BSI) which are formed on the device wafer.

16. The method according to claim 1 , wherein the super contacts are protected by the Si substrate such that they do not project out of the Si substrate.