Varactor diodes
View Patent ↗An improved varactor diode is obtained by providing a substrate having a first surface and in which are formed a first N region having a first peak dopant concentration located at a first depth beneath the surface, and a first P region having a second peak dopant concentration greater than the first peak dopant concentration located at a second depth beneath the surface less than the first depth, and a second P region having a third peak dopant concentration greater than the second peak dopant concentration and located at a third depth at or beneath the surface less than the second depth, so that the first P region provides a retrograde doping profile whose impurity concentration increases with distance from the inward edge of the second P region up to the second peak dopant concentration.
1. A varactor diode comprising:
a substrate having a first surface;
a first region of a first conductivity type having a first peak dopant concentration located at a first depth beneath the surface;
a second region of a second, opposite, conductivity type, having a second peak dopant concentration greater than the first peak dopant concentration located at a second depth beneath the surface; and
a third region of the second, opposite, conductivity type having a third peak dopant concentration greater than the second peak dopant concentration and located at a third depth at or beneath the surface less than the second depth, so that the second region of the second, opposite, conductivity type provides a retrograde doping profile.
2. The diode of claim 1 , wherein the second peak dopant concentration exceeds the first peak dopant concentration by a factor of about 10.
3. The diode of claim 2 , wherein the second peak dopant concentration exceeds the first peak dopant concentration by a factor of about 4.
4. The diode of claim 3 , wherein the second peak dopant concentration exceeds the first peak dopant concentration by a factor of about 2.
5. The diode of claim 1 , wherein the second depth is less than the first depth.
6. The diode of claim 5 , wherein the third depth differs from a depth where the first and third regions have substantially the same doping concentration by a first amount.
7. The diode of claim 6 , wherein the second depth is less than the first depth by about 60 to 50 percent of the first amount.
8. The diode of claim 6 , wherein the second depth is less than the first depth by about 70 to 60 percent of the first amount.
9. The diode of claim 6 , wherein the second depth is less than the first depth by about 75 percent of the first amount.
10. A varactor diode comprising:
a semiconductor substrate having a surface;
a first doped region of a first conductivity type located beneath the surface, and having a first peak dopant concentration located a first distance beneath the surface;
a second doped region of a second, opposite, conductivity type located beneath the surface, and having a second peak dopant concentration located a second distance beneath the surface; and
a third doped region of the second, opposite, conductivity type located at or beneath the surface, and having a third peak dopant concentration such that the second doped region forms a retrograde doping profile extending away from the third doped region at least partly toward the first doped region.
11. The diode of claim 10 , further comprising:
a fourth doped region of the first conductivity type having a fourth peak doping concentration located a fourth distance beneath the surface.
12. The diode of claim 11 , wherein the fourth distance exceeds the first distance.
13. The diode of claim 10 , wherein the second distance is less than the first distance.
14. The diode of claim 10 , wherein the second peak concentration exceeds the first peak concentration.
15. The diode of claim 14 , wherein the second peak concentration exceeds the first peak concentration by a factor of 10 or less.
16. The diode of claim 14 , wherein the second peak concentration exceeds the first peak concentration by a factor of 4 or less.
17. A varactor diode comprising:
a substrate having a surface;
a first N-type doped region in the substrate having a first peak doping concentration located a first distance beneath the surface;
a second N-type doped region in the substrate having a second peak dopant concentration located a second distance beneath the surface less than the first distance;
a third P-type doped region in the substrate having a third peak dopant concentration located a third distance beneath the surface less than the second distance; and
a fourth P-type doped region having a fourth peak dopant concentration greater than the third peak dopant concentration and closer to the surface than the third distance.
18. The diode of claim 17 , wherein the second peak concentration is greater than the first peak concentration.
19. The diode of claim 17 , wherein the third peak dopant concentration is greater than the second peak dopant concentration.
20. The diode of claim 17 , wherein the fourth peak dopant concentration is greater than the third peak dopant concentration.