Preventing the cracking of passivation layers on ultra-thick metals
A device includes a top metal layer; a UTM line over the top metal layer and having a first thickness; and a passivation layer over the UTM line and having a second thickness. A ratio of the second thickness to the first thickness is less than about 0.33.
1. A device comprising:
a top metal layer;
an Ultra-Thick Metal (UTM) line over the top metal layer and having a first thickness, wherein a ratio of the first thickness to a thickness of the top metal layer is greater than about 3;
a via dielectric layer over the top metal layer and under the UTM line;
metal vias in the via dielectric layer, the metal vias extending from the top layer to the UTM line; and
a passivation layer over the UTM line and the via dielectric layer, the passivation layer having a second thickness, wherein a ratio of the second thickness to the first thickness is less than about 0.33.
2. The device of claim 1 , wherein the first thickness is greater than about 20 kÅ.
3. The device of claim 1 , wherein the passivation layer comprises a first portion over and contacting a top surface of the UTM line, and a second portion contacting a sidewall of the UTM line.
4. The device of claim 3 , wherein the passivation layer further comprises a third portion contacting a top surface of the via dielectric layer, and wherein a top surface of the third portion is lower than the top surface of the UTM line.
5. The device of claim 4 , wherein the first portion, the second portion, and the third portion have substantially a same thickness.
6. The device of claim 1 , wherein the passivation layer comprises a silicon oxide layer contacting the UTM line, and a silicon nitride layer over and contacting the silicon oxide layer.
7. The device of claim 1 , wherein no additional layers are formed over and contacting the passivation layer.
8. A device comprising:
a semiconductor substrate;
a plurality of metal layers over the semiconductor substrate and comprising a top metal layer;
a first and a second Ultra-Thick Metal (UTM) line over the top metal layer and having a first thickness, wherein a ratio of the first thickness of the first and second UTM lines to a thickness of the top metal layer is greater than about 3;
a via dielectric layer over the top metal layer and under the first and the second UTM lines;
metal vias extending from the first and the second UTM lines to metal lines in the top metal layer; and
a passivation layer having a second thickness, wherein a ratio of the second thickness to the first thickness is less than about 0.33, wherein the passivation layer comprises first portions over and vertically overlapping the first and the second UTM lines, and second portions on sidewalls of the first and the second UTM lines, and wherein the passivation layer comprises a silicon oxide layer contacting the first and the second UTM lines, and a silicon nitride layer over and contacting the silicon oxide layer.
9. The device of claim 8 , wherein the first thickness is greater than about 20 kÅ.
10. The device of claim 8 , wherein first portions of the passivation layer contact top surfaces of the first and the second UTM lines, and wherein second portions of the passivation layer contact the sidewalls of the first and the second UTM lines.
11. The device of claim 8 , wherein the passivation layer further comprises a third portion contacting a top surface of the via dielectric layer.
12. The device of claim 11 , wherein the first portions and the third portion of the passivation layer have substantially a same thickness.
13. The device of claim 8 , wherein the ratio of the second thickness to the first thickness is smaller than about 0.25.
14. A device comprising:
a semiconductor substrate;
a plurality of metal layers over the semiconductor substrate and comprising a top metal layer;
a via dielectric layer over the top metal layer;
a first and a second Ultra-Thick Metal (UTM) line over the top metal layer and having a first thickness greater than about 20 kÅ, wherein a ratio of the first thickness of the first and second UTM lines to a thickness of the top metal layer is greater than about 3;
a metal via in the via dielectric layer, wherein the metal via is between and interconnecting a metal line in the top metal layer and the first UTM line; and
a passivation layer over the first and the second UTM lines, wherein the passivation layer comprises first portions directly over the first and the second UTM lines, second portions on sidewalls of the first and the second UTM lines, and a third portion contacting a top surface of the via dielectric layer, with the first, the second, and the third portions having thicknesses close to each other, and wherein a ratio of a second thickness of the first portions of the passivation layer to the first thickness is less than about 0.33.
15. The device of claim 14 , wherein the second portions have a thickness greater than about 70 percent of a thickness of the first portions.
16. The device of claim 14 , wherein no additional layers are formed over the passivation layer, and wherein the device is bonded to a package component selected from the group consisting essentially of a package substrate, an interposer, and a printed circuit board.
17. The device of claim 14 , wherein the first and the second UTM lines comprise aluminum copper.
18. The device of claim 14 , wherein the metal via extends from the metal line in the top metal layer to the first UTM line.