Granted Patent B2

US 8,178,950 · App. 13/037,032 · Granted May 15, 2012

Abstract

Claims (35)

1. A semiconductor device structure including a through substrate via (TSV) in a semiconductor substrate having an interlevel dielectric layer overlying a top surface of the substrate, wherein the TSV is formed according to a method comprising:

forming a via opening within the interlevel dielectric layer and the substrate, the via opening having a depth less than a thickness of the substrate;

forming an adhesion layer within the via opening, wherein the adhesion layer comprises titanium (Ti);

forming a nucleation layer over the adhesion layer, wherein the nucleation layer comprises titanium nitride (TiN);

depositing a first tungsten (W) layer over the nucleation layer, the first tungsten layer having a thickness less than or equal to a critical film thickness sufficient to provide for film integrity and adhesion stability;

forming a stress relief layer over the first tungsten layer, wherein the stress relief layer comprises titanium nitride (TiN);

depositing a subsequent tungsten layer over the stress relief layer, the subsequent tungsten layer having a thickness less than or equal to the critical film thickness sufficient to provide for film integrity and adhesion stability, wherein a portion of the subsequent tungsten layer, the stress relief layer, the first tungsten layer, the nucleation layer, and the adhesion layer which overlie the interlevel dielectric layer collectively comprise an overlying composite layer;

planarizing to remove the overlying composite layer and to expose the interlevel dielectric layer and a top of the TSV; and

backgrinding a bottom surface of the substrate sufficient to expose a bottom of the TSV.

2. The semiconductor device structure of claim 1 , wherein prior to planarizing, the method further comprising:

depositing a subsequent stress relief layer overlying the subsequent tungsten layer;

depositing of a still further tungsten layer overlying the subsequent stress relief layer; and

repeating the depositing of the subsequent stress relief layer and the depositing of the still further tungsten layer a number of times sufficient to achieve a desired filling of the via opening.

3. The method of claim 2 , wherein the desired filling of the via opening includes leaving a gap within the via opening, the method further comprising:

filling the gap with a dielectric material.

4. The method of claim 3 , wherein the dielectric material comprises a spin on glass or a sub-atmosphere chemical vapor deposition (SACVD) dielectric material.

5. The method of claim 1 , wherein the via opening comprises a blind via having an aspect ratio of up to 50:1.

6. The method of claim 1 , wherein the via opening has a width dimension between 0.5 to 3.0 microns (5000 to 30000 angstroms) and a depth dimension of greater than 4.0 microns (40000 angstroms) but less than the thickness of the semiconductor substrate.

7. The method of claim 1 , wherein forming the via opening includes forming an insulative coating liner within the via opening.

8. The method of claim 1 , wherein forming the via opening includes forming a tapered via opening, wherein a bottom dimension of the tapered via opening is smaller than a top dimension of the tapered via opening.

9. The method of claim 1 , wherein the adhesion layer has a thickness on the order of 0.01 to 0.04 microns (100 to 400 angstroms), wherein the nucleation layer has a thickness on the order of 0.01 to 0.04 microns (100 to 400 angstroms), wherein the tungsten layer has a thickness on the order of up to 1.0 microns (10000 angstroms), wherein the stress relief layer has a thickness greater than a minimum thickness sufficient to overcome a surface roughness of the tungsten layer, and wherein the subsequent tungsten layer has a thickness on the order of up to 1.0 microns (10000 angstroms).

10. The method of claim 1 , wherein forming the adhesion layer comprises using ion metal plasma (IMP) deposition, wherein forming the nucleation layer comprises using chemical vapor deposition (CVD), wherein depositing the tungsten layer includes using chemical vapor deposition (CVD), wherein forming the stress relief layer comprises using physical vapor deposition (PVD) or chemical vapor deposition (CVD), and wherein depositing the subsequent tungsten layer includes using chemical vapor deposition (CVD).

11. The method of claim 1 , wherein for thicknesses greater than the critical film thickness, the tungsten layer would be prone to undesirable flaking characteristics.

12. The method of claim 1 , wherein depositing the tungsten layer and the subsequent tungsten layer comprise conformal depositing the tungsten layer and the subsequent tungsten layer.

13. The method of claim 1 , wherein the via opening has a width dimension at a top portion thereof which is subject to becoming constricted by the deposition of one or more of the first, subsequent, and further tungsten layers and which prevents the deposition of a yet further tungsten layer within the via opening sufficient to achieve a desired filling of the via opening, the method further comprising:

performing an etch back of a corresponding layer responsible for causing a constriction subsequent to the depositing of the one or more of the first, subsequent, and further tungsten layers, wherein the etch back enables deposition of still further layers within the via opening;

depositing an additional layer within the via opening, wherein the additional layer comprises one or more of a further adhesion layer, a further nucleation layer, and a further stress relief layer; and

depositing the yet further tungsten layer overlying the additional layer within the via opening.

14. The method of claim 1 , wherein prior to the backgrinding, the method further comprising:

forming contact plug via openings within the interlevel dielectric layer and overlying an active device within the semiconductor substrate;

filling the contact plug via openings with tungsten; and

after filling the contact plug via openings, planarizing a top surface of the contact plug via openings to form completed contact plugs.

15. The method of claim 14 , wherein prior to the backgrinding, the method further comprising:

forming an interconnect layer overlying the completed contact plugs and the TSV.

16. The method of claim 1 , wherein the TSV comprises one of a trench via, an annular via, and a sidewall via.

Assignments (24)