IP Library Granted Patent US 8,320,420
Granted Patent B2
US 8,320,420 · App. 13/039,297 · Granted Nov 27, 2012

Polarity independent laser monitor diode current sensing circuit for optical modules

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Quick Facts
Patent No.
US 8,320,420
App. No.
13/039,297
Granted
Nov 27, 2012
Kind
B2
Abstract

A laser bias control and monitoring circuit receives a monitor diode current on an input node and generate a bias current for a laser diode on an output node where the monitor diode current flows into (positive polarity) or out of (negative polarity) the input node. The laser bias control and monitoring circuit includes a polarity independent current sensing circuit configured to receive the monitor diode current in either positive or negative polarity and to generate a normalized output current having a magnitude proportional to a magnitude of the monitor diode current. In this manner, the laser bias control and monitoring circuit can be used with laser diode and monitor diode combination in either the common anode or the common cathode configuration, or with the monitor diode current being provided from the anode or cathode of the monitor diode. No reprogramming or reconfiguration of the circuit is required.

Claims (46)

1. A laser bias control and monitoring circuit configured to receive a monitor diode current on an input node indicative of the average optical output power of a laser diode and generate a bias current for the laser diode on an output node, the monitor diode current flowing into (positive polarity) or out of (negative polarity) the input node, the laser bias control and monitoring circuit comprising:

a polarity independent current sensing circuit configured to receive the monitor diode current in either the positive or negative polarity and to generate a normalized output current having a magnitude proportional to a magnitude of the monitor diode current;

a first load circuit configured to convert the normalized output current into a monitor voltage signal;

a second load circuit configured to convert a bias set current signal into a bias set voltage signal, the bias set current signal being indicative of a desired value of the bias current generated to bias the laser diode;

a comparator configured to compare the monitor voltage signal with the bias set voltage signal, the comparator providing an error signal indicative of a difference between the monitor voltage signal and the bias set voltage signal; and

an amplifier configured to receive the error signal and a reference signal and to generate a bias adjust signal for adjusting the bias current for the laser diode.

2. The circuit of claim 1 , wherein:

the first load circuit comprises a first non-linear load circuit configured to receive the normalized output current and generate the monitor voltage signal using a first non-linear current-to-voltage transfer function; and

the second load circuit comprises a second non-linear load circuit configured to receive the bias set current signal and generate the bias set voltage signal, the second non-linear load circuit being implemented using the first non-linear current-to-voltage transfer function or a scaled version of the first non-linear current-to-voltage transfer function.

3. The circuit of claim 1 , wherein polarity independent current sensing circuit comprises:

a first bipolar transistor having an emitter terminal coupled to the input node, a collector terminal coupled to a current mirror, and a base terminal biased to a first voltage,

wherein when the monitor diode current has a negative polarity, the monitor diode current is sourced out of the emitter terminal of the first bipolar transistor.

4. The circuit of claim 3 , wherein the first bipolar transistor comprises an NPN bipolar transistor.

5. The circuit of claim 1 , wherein polarity independent current sensing circuit comprises:

a second bipolar transistor having an emitter terminal coupled to the input node, a collector terminal coupled to a current mirror, and a base terminal biased to a second voltage,

wherein when the monitor diode current has a positive polarity, the monitor diode current flows into the emitter terminal of the second bipolar transistor.

6. The circuit of claim 5 , wherein the second bipolar transistor comprises a PNP bipolar transistor.

7. The circuit of claim 1 , wherein polarity independent current sensing circuit comprises:

a first MOS transistor having a first current terminal coupled to the input node, a second current terminal coupled to a current minor, and a gate terminal biased to a second voltage,

wherein when the monitor diode current has a positive polarity, the monitor diode current flows into the first current terminal of the first MOS transistor.

8. The circuit of claim 7 , wherein the first MOS transistor comprises a PMOS transistor.

9. The circuit of claim 1 , wherein the monitor diode current is generated by a monitor diode placed in close proximity to the laser diode, the monitor diode and the laser diode being configured in a common anode configuration.

10. The circuit of claim 1 , wherein the monitor diode current is generated by a monitor diode placed in close proximity to the laser diode, the monitor diode and the laser diode being configured in a common cathode configuration.

11. The circuit of claim 1 , wherein the monitor diode current is generated by a monitor diode placed in close proximity to the laser diode, the monitor diode current being provided out of the cathode of the monitor diode and the anode of the monitor diode being connect to a ground potential.

12. The circuit of claim 1 , wherein the monitor diode current is generated by a monitor diode placed in close proximity to the laser diode, the monitor diode current being provided out of the anode of the monitor diode and the cathode of the monitor diode being connect to a positive power supply potential.

13. A method of controlling a bias current of a laser diode, comprising:

providing a monitor diode current on an input node indicative of the average optical output power of a laser diode, the monitor diode current flowing into (positive polarity) or out of (negative polarity) the input node;

receiving the monitor diode current in either positive or negative polarity;

generating a normalized output current having a magnitude proportional to a magnitude of the monitor diode current;

converting the normalized output current to a monitor voltage signal;

providing a bias set voltage signal indicative of a desired value of the bias current generated to bias the laser diode;

comparing the monitor voltage signal to the bias set voltage signal to generate an error signal indicative of a difference between the monitor voltage signal and the bias set voltage signal; and

generating a bias adjust signal for adjusting the bias current for the laser diode in response to the error signal.

14. The method of claim 13 , wherein converting the normalized output current to a monitor voltage signal comprises:

converting the normalized output current to a monitor voltage signal using a first non-linear current-to-voltage transfer function.

15. The method of claim 13 , wherein providing a bias set voltage signal indicative of a desired value of the bias current generated to bias the laser diode comprises:

providing a bias set current signal; and

converting the bias set current signal to the bias set voltage signal using a second non-linear current-to-voltage transfer function being the same as the first non-linear current-to-voltage transfer function or a scaled version of the first non-linear current-to-voltage transfer function.

16. The method of claim 13 , wherein providing a monitor diode current on an input node comprises:

generating the monitor diode current using a monitor diode placed in close proximity to the laser diode, the monitor diode and the laser diode being configured in a common anode configuration.

17. The method of claim 13 , wherein providing a monitor diode current on an input node comprises:

generating the monitor diode current using a monitor diode placed in close proximity to the laser diode, the monitor diode and the laser diode being configured in a common cathode configuration.

18. The method of claim 13 , wherein providing a monitor diode current on an input node comprises:

generating the monitor diode current using a monitor diode placed in close proximity to the laser diode, the monitor diode current being provided out of the cathode of the monitor diode and the anode of the monitor diode being coupled to a ground potential.

19. The method of claim 13 , wherein providing a monitor diode current on an input node comprises:

generating the monitor diode current using a monitor diode placed in close proximity to the laser diode, the monitor diode current being provided out of the anode of the monitor diode and the cathode of the monitor diode being coupled to a positive power supply potential.

Assignments (10)
INTELLECTUAL PROPERTY BUY-IN AGREEMENT/ASSIGNMENT Recorded Apr 4, 2023
From: MICREL LLC
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 063241/0771 →
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2011
From: BROWN, GEORGE W.; WONG, THOMAS S.
To: MICREL INC.
Reel/Frame 025906/0173 →