Method and system for hybrid integration of a tunable laser for a cable TV transmitter

1. A cable television transmitter comprising:

a substrate comprising a silicon material and a recess region having an interface;

control electronics disposed in the substrate;

a gain medium coupled to the substrate and having a facet spatially separated from the interface by an index matching region, wherein the gain medium includes a compound semiconductor material;

an optical modulator optically coupled to the gain medium and electrically coupled to the control electronics;

a phase modulator optically coupled to the optical modulator;

a waveguide disposed in the substrate and optically coupled to the gain medium;

a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate;

a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate;

an optical coupler disposed in the substrate and joining the first wavelength selective element, the second wavelength selective element, and a phase adjustment section disposed in the silicon material substrate between the waveguide and the optical coupler, the phase adjustment section having a heating element; and

an output mirror.

2. The cable television transmitter of claim 1 wherein:

the first wavelength selective element comprises a first modulated grating reflector; and

the second wavelength selective element comprises a second modulated grating reflector.

3. The cable television transmitter of claim 2 wherein the first modulated grating reflector comprises a superstructure grating characterized by a first wavelength spacing between modes.

4. The cable television transmitter of claim 3 wherein the second modulated grating reflector comprises a superstructure grating characterized by a second wavelength spacing between modes different than the first wavelength spacing between modes.

5. The cable television transmitter of claim 1 wherein the silicon material comprises a silicon on insulator wafer.

6. The cable television transmitter of claim 5 wherein the silicon on insulator wafer comprises a silicon substrate, an oxide layer disposed on the silicon substrate, and a silicon layer disposed on the oxide layer, wherein the first wavelength selective element and the second wavelength selective element are disposed in the silicon layer.

7. The cable television transmitter of claim 1 wherein the output mirror is associated with a facet of the gain medium and the optical modulator comprises an external cavity optical element.

8. The cable television transmitter of claim 1 wherein the control electronics comprises CMOS circuitry.

9. The cable television transmitter of claim 1 wherein the phase adjustment section comprises a waveguide section characterized by a variable index of refraction profile.

10. The cable television transmitter of claim 1 wherein the optical modulator comprises a Mach Zehnder modulator.

11. The cable television transmitter of claim 10 further comprising an RF input electrically coupled to the Mach Zehnder modulator.

12. A method of operating a cable television transmitter, the method comprising:

tuning a first modulated grating reflector using control electronics, wherein the first modulated grating reflector is characterized by a first reflectance spectra including a first plurality of reflectance peaks;

tuning a second modulated grating reflector using the control electronics, wherein the second modulated grating reflector is characterized by a second reflectance spectra including a second plurality of reflectance peaks;

generating optical emission from a gain medium comprising a compound semiconductor material;

adjusting a phase of the optical emission from the gain medium through a phase adjustment section integrated in a silicon layer using a heating element;

waveguiding the phase adjusted optical emission to pass through an optical waveguide in the silicon layer to an optical coupler;

reflecting a portion of the optical emission having a spectral bandwidth defined by an overlap of one of the first plurality of reflectance peaks and one of the second plurality of reflectance peaks;

transmitting the portion of the optical emission through an index matching region disposed between the optical waveguide in the silicon layer and the gain medium;

amplifying the portion of the optical emission in the gain medium;

transmitting a portion of the amplified optical emission through an output mirror;

optically modulating the transmitted optical emission to form a pulsed optical output; and

phase modulating the pulsed optical output.

13. The method of claim 12 wherein the first modulated grating reflector and the second modulated grating reflector are disposed in a silicon on insulator wafer.

14. The method of claim 13 wherein the silicon on insulator wafer comprises a silicon substrate, an oxide layer disposed on the silicon substrate, and a silicon layer disposed on the oxide layer, wherein the first modulated grating reflector and the second modulated grating reflector are disposed in the silicon layer.

15. The method of claim 14 wherein the control electronics comprise CMOS circuitry disposed in the silicon layer.

16. The method of claim 13 wherein optically modulating the transmitted optical emission comprises passing the transmitted optical emission through a Mach Zehnder modulator.

17. The method of claim 16 wherein the Mach Zehnder modulator is electrically coupled to an RF input.

18. The method of claim 12 wherein phase adjusting the optical emission is performed using the control electronics.