Integrated circuit devices including complex dielectric layers and related fabrication methods
An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed.
1. An electronic device, comprising:
a lower layer;
a complex dielectric layer on the lower layer, the complex dielectric layer comprising an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon; and
an upper layer on the complex dielectric layer,
wherein the amorphous metal silicate layer prevents connection of respective grain boundaries between the crystalline metal-based insulating layer and a conductive layer or between sublayers of the crystalline metal-based insulating layer.
2. The device of claim 1 , wherein the amorphous metal silicate layer and the crystalline metal-based insulating layer are in direct contact and comprise an identical metal.
3. The device of claim 2 , wherein the metal comprises a higher percentage of the crystalline metal-based insulating layer than at least one other metal included therein.
4. The device of claim 3 , wherein the metal comprises hafnium andor zirconium.
5. The device of claim 3 , wherein the lower layer comprises:
a substrate comprising an active region including at least one transistor.
6. The device of claim 5 , wherein the upper layer comprises an upper electrode layer directly on the complex dielectric layer, and further comprising:
a lower electrode layer or a charge storage layer directly on the complex dielectric layer between the complex dielectric layer and the substrate.
7. The device of claim 6 , wherein the crystalline metal-based insulating layer comprises a crystalline metallic oxide andor a crystalline metallic silicate.
8. The device of claim 7 , wherein the crystalline metal-based insulating layer comprises a multilayer comprising at least two layers selected from the group consisting of a crystalline titanium-based insulating layer, a crystalline hafnium-based insulating layer, a crystalline zirconium-based insulating layer, and a crystalline hafnium-zirconium -based insulating layer.
9. The device of claim 8 , wherein the amorphous metal silicate layer is disposed in the multilayer between the at least two layers.
10. The device of claim 9 , wherein the amorphous metal silicate layer and the at least two layers of the multilayer that are in direct contact with the amorphous metal silicate layer comprise at least one common metal atom.
11. The device of claim 1 , wherein a thickness of the amorphous metal silicate layer is less than that of the crystalline metal-based insulating layer.
12. The device of claim 11 , wherein the thickness of the amorphous metal silicate layer is a fourth or less than a total thickness of the complex dielectric layer.
13. The device of claim 11 , wherein a thickness of the amorphous metal silicate layer is equal to or less than about 10 Angstroms (Å).
14. The device of claim 1 , wherein the amorphous metal silicate layer comprises hafnium and/or zirconium.
15. The device of claim 1 , wherein the amorphous metal silicate layer comprises at least two layers, and wherein the crystalline metal-based insulating layer is between the at least two layers.
16. The device of claim 1 , wherein the amorphous metal silicate layer is disposed between the crystalline metal-based insulating layer and the lower layer.
17. The device of claim 1 , wherein the amorphous metal silicate layer is disposed between the crystalline metal-based insulating layer and the upper layer.
18. An integrated circuit device, comprising:
a substrate comprising an active region including at least one transistor;
an interlayer insulating layer including a contact plug extending therethrough that is electrically connected to the transistor;
a lower electrode layer on the interlayer insulating layer and electrically connected to the contact plug;
a capacitor dielectric layer on the lower electrode layer; and
an upper electrode layer on the capacitor dielectric layer,
wherein the capacitor dielectric layer is a complex dielectric layer comprising an amorphous metallic silicate layer and a crystalline metal-based insulating layer,
wherein the amorphous metallic silicate layer prevents connection of respective grain boundaries between the crystalline metal-based insulating layer and a conductive layer or between sublayers of the crystalline metal-based insulating layer.
19. An integrated circuit device, comprising:
a substrate comprising an active region therein;
a tunneling insulation layer and a charge storage layer sequentially stacked on the active region;
a blocking insulating layer on the charge storage layer; and
an electrode layer on the blocking insulating layer,
wherein the blocking insulating layer is a complex dielectric layer comprising an amorphous metallic silicate layer and a crystalline metal-based insulating layer,
wherein the amorphous metallic silicate layer prevents connection of respective grain boundaries between the crystalline metal-based insulating layer and a conductive layer or between sublayers of the crystalline metal-based insulating layer.
20. The device of claim 19 , wherein the amorphous metallic silicate layer has a lower dielectric constant than the crystalline metal-based insulating layer, and wherein the charge storage layer has a lower dielectric constant than the amorphous metallic silicate layer.