Semiconductor devices with low leakage Schottky contacts
View Patent ↗Embodiments include semiconductor devices with low leakage Schottky contacts. An embodiment is formed by providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the first mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced.
1. A semiconductor device with a Schottky contact, the semiconductor device comprising:
a semiconductor having a semiconductor surface and a mesa in the semiconductor, wherein the mesa is defined by an upper portion of the semiconductor that is thicker than a lower portion of the semiconductor;
a passivation layer covering the mesa, the passivation layer having a passivation layer top surface and an opening over the mesa that has a first width, wherein the opening defines passivation layer sidewalls adjacent to the semiconductor surface;
the Schottky contact disposed in the opening on the semiconductor surface, the Schottky contact having a contact top surface and contact sidewalls along an extent from the semiconductor surface to the contact top surface, wherein the contact sidewalls are in direct contact with the passivation layer sidewalls, and a width of the Schottky contact equals the first width;
a further conductor on the contact top surface of the Schottky contact and extending over portions of the passivation layer top surface on either side of the Schottky contact, the further conductor having a second width greater than the first width; and
spaced-apart Ohmic source and drain contacts on the mesa, which are separated from the Schottky contact,
wherein the passivation layer to surface is at a first height above the semiconductor surface, and the Schottky contact has a second height above the semiconductor surface that is less than the first height, and
wherein the Schottky contact directly contacts the upper portion of the semiconductor.
2. The device of claim 1 , wherein the semiconductor device is a field effect transistor and the Schottky contact is a control gate of the field effect transistor.
3. The device of claim 1 , wherein the semiconductor comprises a type IV, III-V or II-VI material or a combination thereof.
4. The device of claim 3 , wherein the semiconductor comprises GaN.
5. The device of claim 1 , wherein the passivation layer comprises Si 3 N 4 , SiO 2 , SiO x N y , AlN, Al 2 O 3 , HfO 2 , or combinations thereof.
6. The device of claim 1 , wherein the Schottky contact comprises Ni, Au, Pt, Pt—Au, Ni—Au, Ir, Ir—Au, Pd, Pd—Au, TiW, TiWN or combinations thereof.
7. The device of claim 1 , wherein the further conductor comprises Au, Ni—Au, Pt—Au, or combinations thereof.
8. The device of claim 1 , wherein the further conductor directly contacts the passivation layer.
9. A semiconductor device with a Schottky contact, the semiconductor device comprising:
a semiconductor that includes a mesa, wherein the mesa is defined by a first portion of the semiconductor that is thicker than a second portion of the semiconductor;
a passivation layer on a surface of the semiconductor and partially covering the mesa, wherein the passivation layer includes an opening having a first width, wherein the opening exposes a first portion of the mesa, and wherein passivation layer sidewalls are adjacent to the first portion of the mesa;
a Schottky contact on the first portion of the surface of the semiconductor, the Schottky contact having a contact top surface and contact sidewalls along an extent from the first portion of the mesa to the contact top surface, wherein the contact sidewalls are in direct contact with the passivation layer sidewalls, and a width of the Schottky contact equals the first width; and
a step-gate conductor coupled to the contact top surface, wherein the step-gate conductor has a second width that is greater than the first width, and the step-gate conductor overlies parts of the passivation layer adjacent to the Schottky contact; and
spaced-apart Ohmic source and drain contacts on the mesa, separated from the Schottky contact,
wherein a passivation layer to surface of the passivation layer is at a first height above the surface of the semiconductor, and the Schottky contact has a second height above the surface of the semiconductor that is less than the first height, and
wherein the Schottky contact directly contacts the first portion of the semiconductor.
10. The device of claim 9 , wherein the semiconductor comprises a type IV, III-V, II-VI material or combinations thereof.
11. The device of claim 10 , wherein the semiconductor comprises GaN, SiC, AlGaN or combinations thereof.
12. The device of claim 9 , wherein the step-gate conductor directly contacts the passivation layer.