Isotopically-enriched boron-containing compounds, and methods of making and using same
View Patent ↗An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
1. A boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein the compound contains a boron isotope in a concentration or ratio greater than a natural abundance concentration or ratio thereof.
2. The compound of claim 1 , containing (i) atomic mass 10 boron at concentration higher than 19.9% or (ii) atomic mass 11 boron at concentration higher than 80.1%.
3. The compound of claim 2 , wherein the concentration of atomic mass 10 boron isotope is greater than a value selected from the group consisting of 19.9%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 80%, 85%, 90%, 95%, 96%, 97%, 98%, 99%, 99.9%, and 99.99%.
4. The compound of claim 2 , wherein the concentration of atomic mass 10 boron isotope is in a range selected from the group consisting of 20-25%, 25-30%, 30-35%, 35-40%, 40-45%, 45-50%, 50-55%, 55-60%, 60-65%, 65-70%, 70-75%, 75-80%, 80-85%, 85-90%, 90-95%, 95-99% and 95-99.9%.
5. The compound of claim 2 , wherein the concentration of atomic mass 11 boron isotope is greater than a value selected from the group consisting of 80.1%, 85%, 90%, 95%, 96%, 97%, 98%, 99%, 99.9% and 99.99%.
6. The compound of claim 2 , wherein the concentration of atomic mass 11 boron isotope is in a range selected from the group consisting of 81-85%, 85-90%, 90-95%, 95-99%, and 95-99.9%.
7. The compound of claim 1 , wherein the compound contains two boron atoms.
8. The compound of claim 1 , wherein the compound has a chemical formula of B 2 F 4 .
9. The compound of claim 1 , having a ratio of 11 B to 10 B in a range of from 4.1 to 10,000.
10. A method of implanting boron into a substrate, comprising: ionizing a boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein the compound contains a boron isotope in a concentration or ratio greater than a natural abundance concentration or ratio thereof, to generate boron ions; and implanting the boron ions into a substrate.
11. The method of claim 10 , wherein the boron-containing compound contains (i) atomic mass 10 boron at concentration higher than 19.9% or (ii) atomic mass 11 boron at concentration higher than 80.1%.
12. The method of claim 11 , wherein the concentration of atomic mass 10 boron isotope in the boron-containing compound is greater than a value selected from the group consisting of 19.9%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 80%, 85%, 90%, 95%, 96%, 97%, 98%, 99%, 99.9%, and 99.99%.
13. The method of claim 11 , wherein the concentration of atomic mass 10 boron isotope in the boron-containing compound is in a range selected from the group consisting of 20-25%, 25-30%, 30-35%, 35-40%, 40-45%, 45-50%, 50-55%, 55-60%, 60-65%, 65-70%, 70-75%, 75-80%, 80-85%, 85-90%, 90-95%, 95-99% and 95-99.9%.
14. The method of claim 11 , wherein the concentration of atomic mass 11 boron isotope in the boron-containing compound is greater than a value selected from the group consisting of 80.1%, 85%, 90%, 95%, 96%, 97%, 98%, 99%, 99.9% and 99.99%.
15. The method of claim 11 , wherein the concentration of atomic mass 11 boron isotope in the boron-containing compound is in a range selected from the group consisting of 81-85%, 85-90%, 90-95%, 95-99%, and 95-99.9%.
16. The method of claim 10 , wherein the boron-containing compound contains two boron atoms.
17. The method of claim 10 , wherein the boron-containing compound has a chemical formula of B 2 F 4 .
18. The method of claim 10 , wherein the boron-containing compound has a ratio of 11 B to 10 B in a range of from 4.1 to 10,000.
19. The method of claim 10 , wherein said ionizing is carried out in an ionization chamber and said boron-containing compound is delivered through a conduit to the ionization chamber for said ionizing, wherein the conduit is maintained at a temperature effective to suppress clogging of the conduit and/or decomposition of the compound in the conduit.
20. The method of claim 19 , further comprising actively cooling at least one of the conduit and the ionization chamber.