Semiconductor device and method of manufacturing the same
View Patent ↗In the substrate and the epitaxial layer, isolation regions are formed to divide the substrate and the epitaxial layer into a plurality of element formation regions. Each of the isolation regions is formed by connecting first and second P type buried diffusion layers with a P type diffusion layer. By disposing the second P type buried diffusion layer between the first P type buried diffusion layer and the P type diffusion layer, a lateral diffusion width of the first P type buried diffusion layer is reduced. This structure allows a formation region of the isolation region to be reduced in size.
1. A method for manufacturing a semiconductor device, comprising:
preparing a one-conductivity-type semiconductor substrate;
forming an opposite-conductivity-type epitaxial layer on the semiconductor substrate after implanting ions of an impurity for forming a first one-conductivity-type buried diffusion layer into the semiconductor substrate; and
forming an isolation region by firstly implanting ions of an impurity for forming a second one-conductivity-type buried diffusion layer from a surface of the epitaxial layer, then continuously implanting ions of an impurity for forming a one-conductivity-type diffusion layer, and finally performing thermal diffusion, so as to connect the first one-conductivity-type buried diffusion layer, the second one-conductivity-type buried diffusion layer and the one-conductivity-type diffusion layer with one another,
wherein, after a LOCOS oxide film is formed in the epitaxial layer, ions of the impurity for forming the second one-conductivity-type buried diffusion layer and ions of the impurity for forming the one-conductivity-type diffusion layer are implanted from above the LOCOS oxide film.
2. The method of claim 1 wherein the second one-conductivity-type buried diffusion layer and the one-conductivity type diffusion layer are formed in the same thermal diffusion step so as to connect the first one-conductivity-type buried diffusion layer, the second one-conductivity-type buried diffusion layer and the one-conductivity-type diffusion layer with one another.
3. A method for manufacturing a semiconductor device, comprising the steps of:
preparing a one-conductivity-type semiconductor substrate;
forming an opposite-conductivity-type epitaxial layer on the semiconductor substrate after implanting ions of an impurity for forming a first one-conductivity-type buried diffusion layer into the semiconductor substrate; and
forming an isolation region by firstly implanting ions of an impurity for forming a second one-conductivity-type buried diffusion layer from a surface of the epitaxial layer, then continuously implanting ions of an impurity for forming a one-conductivity-type diffusion layer, and finally performing thermal diffusion, so as to connect the first one-conductivity-type buried diffusion layer, the second one-conductivity-type buried diffusion layer and the one-conductivity-type diffusion layer with one another,
wherein, in the step of implanting ions of the impurity for forming the second one-conductivity-type buried diffusion layer and ions of the impurity for forming the one-conductivity-type diffusion layer, the ion implantation is performed so as to allow impurity concentration peaks of the second one-conductivity type buried diffusion layer and the one-conductivity-type diffusion layer to be positioned closer to the surface of the epitaxial layer than a center of the epitaxial layer.
4. The method for manufacturing a semiconductor device, according to claim 3 , wherein ions of the impurity for forming the second one-conductivity-type buried diffusion layer and ions of the impurity for forming the one-conductivity-type diffusion layer are implanted by use of a same resist mask.
5. A method for manufacturing a semiconductor device, comprising the steps of:
preparing a one-conductivity-type semiconductor substrate;
forming an opposite-conductivity-type epitaxial layer on the semiconductor substrate after implanting ions of an impurity for forming a first one-conductivity-type buried diffusion layer into the semiconductor substrate; and
forming an isolation region by firstly implanting ions of an impurity for forming a second one-conductivity-type buried diffusion layer from a surface of the epitaxial layer, then continuously implanting ions of an impurity for forming a one-conductivity-type diffusion layer, and finally performing thermal diffusion, so as to connect the first one-conductivity-type buried diffusion layer, the second one-conductivity-type buried diffusion layer and the one-conductivity-type diffusion layer with one another,
wherein, after a LOCOS oxide film is formed in the epitaxial layer, ions of the impurity for forming the second one-conductivity-type buried diffusion layer and ions of the impurity for forming the one-conductivity-type diffusion layer are implanted from above the LOCOS oxide film by use of a same resist mask.