INTEGRATED DEVICE
An integrated device is disclosed. In one embodiment, the integrated device includes a carrier substrate with a through hole and a contact sleeve. A circuit chip is provided with a contact pad above the carrier substrate. A conductive material electrically connects the contact pad to the contact sleeve.
1 . A method of fabricating an electrical contacting of an integrated device comprising:
a carrier substrate, the carrier substrate comprising a through hole and a contact sleeve, the contact sleeve being arranged such that an opening of the contact sleeve and the through hole at least in part overlap; and
a circuit chip above the carrier substrate, the circuit chip comprising a contact padon a surface facing the carrier substrate, the contact pad being arranged such that the contact pad and the opening of the contact sleeve at least in part overlap,
wherein a conductive material is applied to electrically connect the contact pad to the contact sleeve after stacking the circuit chip on the carrier substrate such that the contact pad and the opening of the contact sleeve at least in part overlap.
2 . The method of claim 1 , the contact sleeve comprising a coating, the coating comprising a weldable material.
3 . The method of claim 1 , the conductive material comprising a welding seam.
4 . The method of claim 1 , the integrated device comprising a projecting contact, the projecting contact being arranged on the contact pad and at least in part in the through hole.
5 . The method of claim 4 , the projecting contact comprising a coating, the coating comprising a weldable material.
6 . The method of claim 4 , the projecting contact touching the contact sleeve along a continuous line.
7 . The method of claim 6 , the conductive material comprising a welding seam at least along a part of the continuous line.
8 . The method of claim 4 , the projecting contact comprising at least one of the metals copper, gold, tin, lead, silver, antimony, aluminum, and bismuth.
9 . The method of claim 1 , the contact sleeve comprising at least one of the metals copper, gold, tin, lead, silver, antimony, aluminum or bismuth.
10 . The method of claim 1 , the through hole being at least partially filled with the conductive material.
11 . The method of claim 10 , the conductive material comprising a soldering metal.
12 . The method of claim 10 , the conductive material comprising at least one of the metals copper, gold, tin, lead, silver, antimony, aluminum, and bismuth.
13 . The method of claim 1 , the integrated device comprising an insulating material being arranged between the circuit chip and the carrier substrate.
14 . A method of fabricating an electrical contacting of an integrated circuit to a carrier substrate comprising the processes of:
providing an integrated circuit comprising a contact pad on a surface of the integrated circuit;
providing the carrier substrate with a through hole;
providing a contact sleeve such that an opening of the contact sleeve and the through hole at least in part overlap;
stacking the integrated circuit on the carrier substrate such that the contact pad and the opening of the contact sleeve at least in part overlap; and
contacting the contact pad to the contact sleeve.
15 . The method of claim 14 , the method comprising prior to the stacking, a providing of a projecting contact on the contact pad of the integrated circuit, and during stacking the projecting contact is at least partially inserted into the through hole.
16 . The method of claim 15 , the providing of the projecting contact being carried out by using galvanic deposition.
17 . The method of claim 15 , the providing of the projecting contact being carried out by using melting a wire.
18 . The method of claim 15 , the providing of the projecting contact being carried out by using depositing a material portion in a liquid state, the projecting contact being formed by the solidified material portion.
19 . The method of claim 15 , the providing of the projecting contact comprising a coating of the projecting contact with a weldable material.
20 . The method of claim 15 , the contacting of the contact pad to the contact sleeve being carried out by using welding the projecting contact to the contact sleeve.
21 . The method of claim 20 , the welding being carried out by using laser welding.
22 . The method of claim 20 , the welding being carried out by using ultrasonic welding.
23 . The method of claim 14 , the contacting of the contact pad to the contact sleeve being carried out by using welding.
24 . The method of claim 23 , the providing of the contact sleeve comprising a coating of the inner wall of the sleeve with a weldable material.
25 . The method of claim 23 , the welding being carried out by using laser welding.
26 . The method of claim 23 , the welding being carried out by using ultrasonic welding.
27 . The method of claim 14 , the contacting of the contact pad to the contact sleeve being carried out by gluing, using a conductive adhesive.
28 . The method of claim 14 , the contacting of the contact pad to the contact sleeve being carried out by using at least a partially filling of the through hole with a soldering metal.
29 . The method of claim 28 , the filling being carried out by using wave soldering.
30 . The method of claim 28 , the filling comprising a depositing of a soldering paste in an area of the contact pad and a melting the soldering paste.
31 . The method of claim 28 , the filling comprising a depositing of a soldering paste in an area of the contact sleeve and a melting the soldering paste.
32 . The method of claim 14 , the method comprising a filling of an intermediate space between the integrated circuit and the carrier substrate with an insulating material.
33 . The method of claim 14 , the method comprising an inspecting of the contact of the contact pad to the contact sleeve, and the method comprising, in the case of a faulty contact, a renewed contacting of the contact pad to the contact sleeve.