Precursors for CVD silicon carbo-nitride films
View Patent ↗Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si x C y N z . These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R 1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R 1 in formula A also being combinable into a cyclic group, and R 2 representing a single bond, (CH 2 ) n , a ring, or SiH 2 .
1. A composition for depositing a dielectric film comprising:
an aminosilane comprising the following formula A:
wherein R and R 1 are each independently selected from the group consisting of isopropyl, t-butyl, sec-butyl, t-pentyl, sec-pentyl, cyclopropyl, cyclopentyl, and cyclohexyl groups; and
optionally a precursor selected from the group consisting of bis-tert-butylaminosilane, tris-iso-propylaminosilane, bis-diethylaminosilane, tris-dimethylaminosilane, and bis-iso-propylaminosilane
wherein R and R 1 in formula A are optionally combined into a cyclic group.
2. The composition of claim 1 wherein R and R 1 are combined into a cyclic group.
3. The composition of claim 1 wherein R and R 1 are isopropyl groups.
4. The composition of claim 1 wherein the precursor comprises bis-tert-butylaminosilane.
5. The composition of claim 1 wherein the precursor comprises tris-iso-propylaminosilane.
6. The composition of claim 1 wherein the precursor comprises bis-diethylaminosilane.
7. The composition of claim 1 wherein the precursor comprises tris-dimethylaminosilane.
8. The composition of claim 1 wherein the precursor comprises bis-iso-propylaminosilane.
9. A composition for depositing a dielectric film comprising:
an aminosilane comprising the following formula A:
wherein R and R 1 are each sec-butyl groups; and
optionally a precursor selected from the group consisting of bis-tert-butylaminosilane, tris-iso-propylaminosilane, bis-diethylaminosilane, tris-dimethylaminosilane, and bis-iso-propylaminosilane.
10. The composition of claim 2 wherein R comprises isopropyl and R 1 comprises sec-butyl.