Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
View Patent ↗A semiconductor device includes a semiconductor layer having a first conductivity type and having a surface in which an active region of the semiconductor device is defined, and a plurality of spaced apart doped regions within the active region. The plurality of doped regions have a second conductivity type that is opposite the first conductivity type and define a plurality of exposed portions of the semiconductor layer within the active region. The plurality of doped regions include a plurality of rows extending in a longitudinal direction. Each of the rows includes a plurality of longitudinally extending segments, and the longitudinally extending segments in a first row at least partially overlap the longitudinally extending segments in an adjacent row in a lateral direction that is perpendicular to the longitudinal direction.
1. A semiconductor device, comprising:
a semiconductor layer having a first conductivity type and having a surface in which an active region of the semiconductor device is defined;
a plurality of spaced apart doped regions within the active region, the plurality of doped regions having a second conductivity type that is opposite the first conductivity type and defining a plurality of exposed portions of the semiconductor layer within the active region;
wherein the plurality of doped regions comprise a plurality of rows extending in a longitudinal direction, each of the rows including a plurality of longitudinally extending segments; and
wherein the longitudinally extending segments in a first row at least partially overlap the longitudinally extending segments in an adjacent row in a lateral direction that is perpendicular to the longitudinal direction.
2. The semiconductor device of claim 1 , wherein a first longitudinally extending segment in the first row at least partially overlaps two longitudinally extending segments in the adjacent row in the lateral direction.
3. The semiconductor device of claim 1 , wherein longitudinally adjacent ones of the longitudinally extending segments in the first row are spaced apart by a distance L, and laterally adjacent ones of the longitudinally extending segments in adjacent rows are spaced apart by a distance W, wherein L is about equal to W.
4. The semiconductor device of claim 1 , wherein any point in the active region of the semiconductor device is at least as close to at least one of the longitudinally extending segments as one half of a spacing between overlapping portions of laterally adjacent ones of the longitudinally extending segments in adjacent rows.
5. The semiconductor device of claim 1 , wherein any point in the active region of the semiconductor device is at least as close to at least one of the longitudinally extending segments as one half of a spacing between longitudinally adjacent ones of the longitudinally extending segments in a row.
6. The semiconductor device of claim 1 , further comprising a metal region in contact with the exposed portions of the semiconductor layer and the doped regions.
7. The semiconductor device of claim 6 , wherein the semiconductor layer comprises a silicon carbide semiconductor layer.
8. The semiconductor device of claim 7 , wherein the doped regions comprise p-type silicon carbide having a dopant concentration of from about 1×10 17 to about 1×10 18 cm −3 .
9. The semiconductor device of claim 1 , further comprising a second doped region in the semiconductor layer, the second doped region having a doping concentration that is greater than a doping concentration of the doped regions, wherein the plurality of doped regions and the second doped region are located at the surface of the semiconductor layer, and wherein a ratio of a surface area occupied by the plurality of doped regions and the second doped region to a total surface area of the active region of the diode is less than about 0.4.
10. The semiconductor device of claim 9 , further comprising a metal layer on the semiconductor layer and forming a Schottky junction with the exposed portions of the semiconductor layer, wherein a turn-on voltage of a p-n junction between the second doped region and the semiconductor layer is higher than a turn-on voltage of the Schottky junction between the metal layer and the exposed portions of the semiconductor layer.
11. The semiconductor device of claim 10 , wherein the doped regions have a thickness and dopant concentration such that punch-through of p-n junctions between the doped regions and the semiconductor layer occurs at a lower voltage than breakdown of the Schottky junction between the metal layer and the exposed portions of the semiconductor layer.
12. The semiconductor device of claim 1 , further comprising an edge termination region, wherein the doped regions have a thickness and dopant concentration such that punch-through of p-n junctions between the doped regions and the semiconductor layer occurs at a lower voltage than a breakdown voltage of the edge termination region.