Split-gate non-volatile memory cell having improved overlap tolerance and method therefor
View Patent ↗A method for forming a split-gate non-volatile memory (NVM) cell includes forming a first gate layer over a semiconductor substrate; forming a conductive layer over the first gate layer; patterning the first gate layer and the conductive layer to form a first sidewall, wherein the first sidewall comprises a sidewall of the first gate layer and a sidewall of the conductive layer; forming a first dielectric layer over the conductive layer and the semiconductor substrate, wherein the first dielectric layer overlaps the first sidewall; forming a second gate layer over the first dielectric layer, wherein the second gate layer is formed over the conductive layer and the first gate layer and overlaps the first sidewall; and patterning the first gate layer and the second gate layer to form a first gate and a second gate, respectively, of the split-gate NVM cell, wherein the second gate overlaps the first gate and a portion of the conductive layer remains between the first gate and the second gate.
1. A method for forming a split-gate non-volatile memory (NVM) cell comprising:
forming a first gate layer over a semiconductor substrate;
forming a conductive layer over the first gate layer;
patterning the first gate layer and the conductive layer to form a first sidewall, wherein the first sidewall comprises a sidewall of the first gate layer and a sidewall of the conductive layer;
forming a first dielectric layer over the conductive layer and the semiconductor substrate, wherein the first dielectric layer overlaps the first sidewall;
forming a second gate layer over the first dielectric layer, wherein the second gate layer is formed over the conductive layer and the first gate layer and overlaps the first sidewall; and
patterning the first gate layer and the second gate layer to form a first gate and a second gate, respectively, of the split-gate NVM cell, wherein the second gate overlaps the first gate and a portion of the conductive layer remains between the first gate and the second gate.
2. The method of claim 1 , wherein a major surface of the portion of the conductive layer is substantially parallel to a major surface of the substrate.
3. The method of claim 1 , further comprising:
forming a spacer adjacent sidewalls of the first gate and the second gate;
forming source/drain regions in the substrate adjacent the first gate and adjacent the second gate; and
forming silicide regions on an exposed surface of the second gate and on exposed surfaces of the source/drain regions.
4. The method of claim 3 , wherein the step of forming silicide regions further comprises forming a silicide region on an exposed surface of the first gate.
5. The method of claim 1 , wherein the first gate is further characterized as a select gate of the split-gate NVM cell and the second gate is further characterized as a control gate of the split-gate NVM cell.
6. The method of claim 1 , wherein the step of patterning the first gate layer and the second gate layer to form the first gate and the second gate comprises:
patterning the second gate layer to form a first sidewall of the second gate layer, wherein the patterning the second gate layer removes portions of the conductive layer over the first gate layer which are not covered by the second gate layer; and
after the step of patterning the second gate layer to form the first sidewall of the second gate layer, patterning the second gate layer and first gate layer to form a second sidewall of the second gate layer and a second sidewall of the first gate layer.
7. The method of claim 1 , wherein the step of patterning the first gate layer and the second gate layer to form the first gate and the second gate comprises:
using a single mask to pattern the first gate layer and the second gate layer to form first and second sidewalls of the second gate layer and a second sidewall of the first gate layer.
8. The method of claim 1 , wherein the conductive layer comprises a material having a resistivity of less than approximately 1000 milli-Ohms per square.
9. The method of claim 1 , wherein the conductive layer comprises a material selected from a group consisting of a transition metal and a compound of a transition metal.
10. The method of claim 1 , wherein the conductive layer comprises a material selected from a group consisting of a nitride, a silicide, and an oxide.
11. The method of claim 1 , wherein the conductive layer comprises titanium nitride.
12. A method for forming a split-gate non-volatile memory (NVM) cell comprising:
forming a select gate layer over a semiconductor substrate;
forming a conductive layer over the select gate layer, wherein the conductive layer comprises a material selected from a group consisting of a nitride, a silicide, and an oxide;
patterning the select gate layer and the conductive layer to form a first sidewall, wherein the first sidewall comprises a sidewall of the select gate layer and a sidewall of the conductive layer;
forming a first dielectric layer over the conductive layer and the semiconductor substrate, wherein the first dielectric layer overlaps the first sidewall;
forming a control gate layer over the first dielectric layer, wherein the control gate layer is formed over the conductive layer and the select gate layer and overlaps the first sidewall;
patterning the select gate layer and the control gate layer to form a select gate and a control gate, respectively, of the split-gate NVM cell, wherein the control gate overlaps the select gate and a portion of the conductive layer remains between the select gate and the control gate;
forming a spacer adjacent sidewalls of the first gate and the second gate;
forming a first source/drain region in the substrate adjacent the select gate and a second source/drain region in the substrate adjacent the control gate; and
forming silicide regions on an exposed surface of the control gate and on exposed surfaces of the first and second source/drain regions.
13. The method of claim 12 , wherein a major surface of the portion of the conductive layer is substantially parallel to a major surface of the substrate.
14. The method of claim 12 , wherein the step of forming silicide regions further comprises forming a silicide region on an exposed surface of the select gate.
15. The method of claim 12 , wherein the step of patterning the select gate layer and the control gate layer to form the select gate and the control gate comprises:
patterning the control gate layer to form a first sidewall of the control gate layer, wherein the patterning the control gate layer removes portions of the conductive layer over the select gate layer which are not covered by the control gate layer; and
after the step of patterning the control gate layer to form the first sidewall of the control gate layer, patterning the control gate layer and select gate layer to form a second sidewall of the control gate layer and a second sidewall of the select gate layer.
16. The method of claim 12 , wherein the step of patterning the select gate layer and the control gate layer to form the select gate and the control gate comprises:
using a single mask to pattern the select gate layer and the control gate layer to form first and second sidewalls of the control gate layer and a second sidewall of the select gate layer.
17. The method of claim 12 , wherein the conductive layer comprises a material having a resistivity of less than approximately 1000 milli-Ohms per square.