Method for electron beam induced deposition of conductive material
View Patent ↗The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate, storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate.
1. A method, comprising:
storing dicobalt octacarbonyl at a first temperature of 240 K to 290 K;
heating the dicobalt octacarbonyl to a second temperature greater than the first temperature; and
after heating the dicobalt octacarbonyl to the second temperature, interacting the dicobalt octacarbonyl with an electron beam to deposit a material on a substrate,
wherein interacting the dicobalt octacarbonyl with the electron beam comprises adjusting a refresh time of the electron beam and adjusting a dwell time of the electron beam so that the material has a specific electric resistance of less than 100 μΩ·cm, and
wherein the electron beam has a current between 1 pA and 1 nA.
2. The method of claim 1 , wherein the first temperature is 253K.
3. The method of claim 1 , wherein the first temperature is a range of 250 K to 260 K.
4. The method of claim 1 , wherein, interacting the dicobalt octacarbonyl with the electron beam, the electron beam has a refresh time in a range of 0.2 milliseconds to 20 milliseconds, and the electron beam has a dwell time in a range between 10 nanoseconds and 2000 nanoseconds.
5. The method of claim 1 , wherein the second temperature is in a range of 265 K to 320 K.
6. The method of claim 1 , wherein the second temperature is in a range of 270 K to 300 K.
7. The method of claim 1 , wherein the second temperature is in a range of 275 K to 280 K.
8. The method of claim 1 , comprising using the material to fill a via.
9. The method of claim 8 , wherein, when first filling the via, the electron beam has a refresh time of 20 milliseconds to 0.2 milliseconds.
10. The method of claim 8 , wherein:
when first filling the via, the electron beam has a first refresh time;
at the end of filling the via, the electron beam has a second refresh time; and
the second refresh time is less than the first refresh time.
11. The method of claim 8 , wherein, when first filling the via, the electron beam has a dwell time of 2000 nanoseconds to 10 nanoseconds.
12. The method of claim 8 , wherein:
when first filling the via, the electron beam has a first dwell time;
at the end of filling the via, the electron beam has a second dwell time; and
the second dwell time is less than the first dwell time.
13. The method of claim 8 , wherein a quotient of a refresh time of the electron beam and a dwell time of the electron beam is increased with increasing aspect ratio of the via during filling the via.
14. The method of claim 1 , further comprising removing carbon dioxide formed by the interaction of the electron beam and the dicobalt octacarbonyl.
15. The method of claim 1 , wherein the method is performed in a vacuum chamber that has no heat sources other than the electron beam.
16. The method of claim 1 , comprising using a temperature control and a cooling device to store the dicobalt octacarbonyl at the first temperature.
17. The method of claim 1 , comprising heating the dicobalt octacarbonyl from the first temperature to the second temperature as the dicobalt octacarbonyl flows from a source to the electron beam.
18. A method, comprising:
storing dicobalt octacarbonyl at a first temperature of 240 K to 290 K;
heating the dicobalt octacarbonyl to a second temperature greater than the first temperature, the second temperature being from 265 K to 320 K; and
after heating the dicobalt octacarbonyl to the second temperature, interacting the dicobalt octacarbonyl with an electron beam to fill a via with a material formed by the interaction of the electron beam and the dicobalt octacarbonyl
wherein interacting the dicobalt octacarbonyl with the electron beam comprises adjusting a refresh time of the electron beam and adjusting a dwell time of the electron beam so that the material has a specific electric resistance of less than 100 μΩ·cm, and
wherein the electron beam has a current between 1 pA and 1 nA.
19. The method of claim 18 , wherein the first temperature is in a range of 250 K to 260 K.
20. the method of claim 18 , wherein the second temperature is in a range of 270 K to 300 K.
21. The method of claim 18 , wherein the second temperature is in a range of 275 K to 280 K.