Oxide sintered compact for producing transparent conductive film
View Patent ↗The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element.
1. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and manganese as a second additive element, with the content of tin, which is the first additive element, being 2-15 atom % relative to the total content of indium and tin, and the content of manganese, which is the second additive element, being 0.5-2 atom % relative to the total content of indium, tin and manganese.
2. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, one or more elements selected from germanium and manganese as a second additive element, and one or more elements selected from magnesium and calcium as a third additive element, and not containing zinc, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive elements and the third additive elements being 0.1-2 atom % relative to the total content of indium, tin, the second additive elements and the third additive elements.
3. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, one or more elements selected from germanium, nickel, and manganese as a second additive element, and calcium as a third additive element, and not containing zinc, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive elements and the third additive element being 0.1-2 atom % relative to the total content of indium, tin, the second additive elements and the third additive element.
4. A method of producing an amorphous film, comprising performing sputtering deposition on a substrate by sputtering a target formed from the oxide sintered compact according to claim 1 , 2 or 3 , without heating the a substrate.
5. An amorphous film having the same composition as that of the oxide sintered compact according to claim 1 , 2 or 3 .
6. A method of producing a crystallized film, comprising crystallizing the amorphous film according to claim 5 by annealing the film at a temperature of 160-250° C.
7. A crystallized film having the same composition as that of the oxide sintered compact according to claim 1 , 2 or 3 .
8. A crystallized film according to claim 7 having resistivity of less than 4.5×10 −4 Ω cm.