Chip-stacked semiconductor device and manufacturing method thereof
View Patent ↗A method of manufacturing a semiconductor device, includes forming a trench surrounding a first area of a semiconductor substrate, the trench having a bottom surface and two side surfaces being opposite to each other, forming a silicon film on the bottom surface and side surfaces of the trench, forming an insulation film on the silicon film in the trench, grinding a bottom surface of the semiconductor substrate to expose the insulation film formed over the bottom surface of the trench, and forming a through electrode in the first area after grinding the bottom surface of the semiconductor substrate, the through electrode penetrating the semiconductor substrate.
1. A method of manufacturing a semiconductor device, comprising:
forming a trench surrounding a first area of a semiconductor substrate;
forming a silicon film in the trench;
forming an insulation film in the trench, the forming of the insulation film comprising forming a first layer of the insulation film by thermally oxidizing the silicon film;
forming an interconnection wire over the semiconductor substrate electrically connected with the first area of the semiconductor substrate, such that the interconnection wire extends outside the first area of the semiconductor substrate; and
forming a contact plug on the interconnection wire outside the first area of the semiconductor substrate.
2. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the insulation film includes a second layer formed on the first layer, the second layer being formed by CVD method.
3. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the insulation film includes a silicon oxide film formed by CVD method.
4. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the silicon film includes a polycrystalline silicon film.
5. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the silicon film includes a monocrystalline silicon film.
6. The method of manufacturing a semiconductor device as claimed in claim 1 , further comprising:
removing of a portion of a bottom surface of the semiconductor substrate; and
forming a transistor on the semiconductor substrate between the forming of the insulation film and the removing of the portion of the bottom surface of the semiconductor substrate.
7. The method of manufacturing a semiconductor device as claimed in claim 6 ,
wherein the removing of the portion of the bottom surface of the semiconductor substrate comprises grinding the bottom surface of the semiconductor substrate.
8. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein the forming of the silicon film comprises forming the silicon film on a bottom surface of the trench and side surfaces formed adjacent to the bottom surface of the trench.
9. The method of manufacturing a semiconductor device as claimed in claim 1 , further comprising:
forming a through electrode in the semiconductor substrate.
10. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the interconnection wire contacts a surface of the semiconductor substrate in the first area.
11. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the forming of the insulation film comprises forming the insulation film on a second area of semiconductor substrate outside of the first area, and
wherein the insulation film electrically isolates the semiconductor substrate from the interconnection wire in the second area.
12. A method of manufacturing a semiconductor device, comprising:
forming a trench surrounding a first area of a semiconductor substrate;
forming a sidewall film in the trench, the sidewall film comprising a first silicon oxide film and a second silicon oxide film, and
forming an interconnection wire over the semiconductor substrate electrically connected with the first area of the semiconductor substrate, such that the interconnection wire extends outside the first area of the semiconductor substrate; and
forming a contact plug on the interconnection wire outside the first area of the semiconductor substrate,
the forming of the sidewall film comprising:
forming a silicon film in the trench; and
forming the first silicon oxide film by thermally oxidizing the silicon film.
13. The method of manufacturing a semiconductor device as claimed in claim 12 ,
wherein the second silicon oxide film is formed by a CVD method.
14. The method of manufacturing a semiconductor device as claimed in claim 12 , wherein the silicon film comprises a polycrystalline silicon film.
15. The method of manufacturing a semiconductor device as claimed in claim 12 , wherein the silicon film comprises a monocrystalline silicon film.
16. The method of manufacturing a semiconductor device as claimed in claim 12 , further comprising reducing a thickness of the semiconductor substrate from a bottom surface of the semiconductor substrate.
17. The method of manufacturing a semiconductor device as claimed in claim 12 , further comprising forming a through electrode in the semiconductor substrate.
18. A method of manufacturing a semiconductor device, comprising:
forming a trench surrounding a first area of a semiconductor substrate;
forming a sidewall film in the trench; and
forming an interconnection wire over the semiconductor substrate electrically connected with the first area of the semiconductor substrate, such that the interconnection wire extends outside the first area of the semiconductor substrate; and
forming a contact plug on the interconnection wire outside the first area of the semiconductor substrate,
the forming of the sidewall film comprising:
forming a silicon film in the trench; and
forming a silicon oxide film by thermally oxidizing the silicon film.
19. The method of manufacturing a semiconductor device as claimed in claim 18 ,
wherein the silicon film comprises a polycrystalline silicon film.
20. The method of manufacturing a semiconductor device as claimed in claim 18 ,
wherein the silicon film comprises a monocrystalline silicon film.
21. The method of manufacturing a semiconductor device as claimed in claim 18 , further comprising reducing a thickness of the semiconductor substrate from a bottom surface of the semiconductor substrate.
22. The method of manufacturing a semiconductor device as claimed in claim 18 , further comprising forming a through electrode in the semiconductor substrate.
23. The method of manufacturing a semiconductor device as claimed in claim 18 , wherein the forming of the silicon oxide film comprises forming the silicon oxide film such that a gap is formed is formed in the trench at a surface of the silicon oxide film, a thickness of the silicon oxide film being less than a width of the gap.