IP Library Granted Patent US 8,372,372
Granted Patent B2
US 8,372,372 · App. 13/067,439 · Granted Feb 12, 2013

Clean bench and method of producing raw material for single crystal silicon

Inventors: Kazuhiro Sakai (Yokkaichi, JP); Yukiyasu Miyata (Suzuka, JP)
Assignee: Mitsubishi Materials Corporation
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Quick Facts
Patent No.
US 8,372,372
App. No.
13/067,439
Granted
Feb 12, 2013
Kind
B2
Abstract

A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space.

Claims (21)

1. A method of producing a raw material for single crystal silicon comprising:

depositing a column-shaped polycrystalline silicon by a reaction with raw gas including chlorosilane gas and hydrogen gas;

crushing the column-shaped polycrystalline silicon into a plurality of lumps of polycrystalline silicon or cutting the column-shaped polycrystalline silicon into rod-shaped polycrystalline silicon with a predetermined length;

washing the polycrystalline silicon using an acid to remove impurities adhering to a surface thereof;

immersing the washed polycrystalline silicon in a pure water bath to remove the remaining acid from the surface thereof;

drying the polycrystalline silicon taken out of the pure water bath by being put in a drier; and

cleaning the polycrystalline silicon by removing static electricity from the surface of the polycrystalline silicon having been dried,

wherein, in the cleaning, the polycrystalline silicon is cleaned by being exposed to clean air on the worktable of a clean bench comprising:

a worktable on which polycrystalline silicon is placed;

a box part which includes side plates to surround three sides except a front face of a working space above the worktable and which includes a vertically extending part, extending from the bottom to the top of the box part, and an upper extending part, extending above the working space;

a ceiling plate, which covers an upper side of the working space, with supplying holes formed in the ceiling plate of the box part, which supply air from the upper extending part onto an upper surface of the worktable;

an ionizer, which ionizes the air supplied from the supplying holes to the working space and removes static electricity on the worktable;

suction holes formed in the side plate of the box part, which suction air from the working space;

a closed loop communicative route which communicates between the suction holes and the supplying holes;

a partition dividing the vertically extending part from the upper extending part;

a blower, which sends the air to the upper extending part, is provided in the vertically extending part and is disposed to contact with the partition; and

a worktable communicative route connecting a working surface of the worktable to the communicative route at a lower side surface of the worktable.

2. The method according to claim 1 , wherein the clean bench further comprises a filter which removes particles from clean air supplied from the blower.

3. The method according to claim 2 , wherein the filter comprises:

a first filter which is arranged at an upstream side of the blower for removing particles having diameter larger than a predetermined size; and

a second filter which is arranged at a downstream side of the blower for removing particles which passed the first filter.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2023
From: MITSUBISHI MATERIALS CORPORATION
To: HIGH-PURITY SILICON CORPORATION
Reel/Frame 063858/0867 →
Priority Claims (2)
JP 2007-229211 · Sep 4, 2007 · national
JP 2008-168497 · Jun 27, 2008 · national
Continuity (2)
Division 12230592 · Sep 2, 2008
Related Publication 20110236292A1 · Sep 29, 2011