Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

1. A method of forming silicon nitride (Si 3 N 4 ) on a substrate, comprising contacting the substrate with

(i) a precursor of the formula

[SiX n (NR 1 R 2 ) 3-n ] 2

wherein:

R 1 and R 2 may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 5 alkyl, and C 3 -C 6 cycloalkyl;

X is selected from the group consisting of halogen (e.g., bromine, fluorine and chlorine), hydrogen and deuterium; and

0≦n≦2; and

(ii) a nitrogen source compound.

2. The method of claim 1 , wherein said nitrogen source compound comprises ammonia.

3. The method of claim 1 , wherein said nitrogen source compound is selected from the group consisting of R 3 Si—N 3 , R—N═NR′ and R—N═N + ═NR′, wherein each R is independently selected from the group consisting of C 1 -C 3 alkyl substituents, and R′ is R or H.

4. The method of claim 1 , wherein said nitrogen source compound is selected from the group consisting of (i) R-diazo compounds, wherein R is H, C 1 -C 4 alkyl or C 3 -C 6 cycloalkyl, (ii) triazoles, (iii) tetrazoles, (iv) amadines, (v) silylazides, (vi) aziridines, and (vii) molecules including organic acyclic or cyclic moieties that contain one or more —N—N bonds.

5. The method of claim 1 , wherein said contacting is carried out at temperature below 600° C.

6. The method of claim 1 , wherein said contacting is carried out at temperature below 550° C.

7. The method of claim 1 , wherein said contacting is carried out at temperature below 500° C.

8. The method of claim 1 , wherein said contacting is carried out at temperature in a range of from 350° C. to 500° C.

9. The method of claim 1 , wherein said contacting is carried out at temperature in a range of from 100° C. to 350° C.

10. The method of claim 1 , wherein the precursor is transported to the substrate in a carrier gas.

11. The method of claim 10 , wherein the carrier gas comprises helium.

12. The method of claim 1 , wherein said contacting is carried out in a chemical vapor deposition process.

13. The method of claim 12 , wherein said contacting is carried out at pressure in a range of from about 1 to about 1000 torr.

14. The method of claim 1 , wherein said contacting is carried out in an atomic layer deposition process.

15. The method of claim 1 , wherein said precursor is selected from the group consisting of (Et 2 N) 2 ClSi—SiCl(NEt 2 ) 2 , (EtNH) 3 Si—Si(HNEt) 3 , (Bu t NH) 2 ClSi—SiCl(HNBu t ) 2 , (Me 2 N) 2 ClSi—SiCl(NMe 2 ) 2 , Cl 2 HSi—SiHCl 2 , and (EtNH) 2 HSi—SiH(NHEt) 2 .

16. The method of claim 1 , wherein said precursor is selected from the group consisting of (EtNH) 3 Si—Si(HNEt) 3 , (Bu t NH) 2 ClSi—SiCl(HNBu t ) 2 , and (EtNH) 2 HSi—SiH(NHEt) 2 .

17. The method of claim 1 , wherein said precursor is selected from the group consisting of:

(i) precursors of said formula wherein:

R 1 ═R 2 ═C 3 -C 6 cycloalkyl;

X is selected from the group consisting of halogen, hydrogen and deuterium; and

0<n<2;

(ii) precursors of said formula wherein:

at least one of R 1 and R 2 is H, and the other is selected from the group consisting of H, C 1 -C 5 alkyl, and C 3 -C 6 cycloalkyl;

X is selected from the group consisting of halogen, hydrogen and deuterium; and

0<n<2;

(iii) precursors of said formula wherein:

one of R 1 and R 2 is H, and the other is C 1 -C 5 alkyl;

X is selected from the group consisting of halogen, hydrogen and deuterium; and

0<n<2; and

(iv) precursors of said formula wherein:

one of R 1 and R 2 is H, and the other is ethyl or butyl;

X is chlorine; and

n is 0 or 1.

18. The method of claim 1 , wherein said precursor comprises (EtNH) 3 Si—Si(HNEt) 3 .

19. The method of claim 1 , wherein said precursor comprises (Bu t NH) 2 ClSi—SiCl(HNBu t ) 2 .

20. The method of claim 1 , wherein said precursor comprises (EtNH) 2 HSi—SiH(NHEt) 2 .