Method for fabricating storage node of semiconductor device
View Patent ↗A method for fabricating a storage node of a semiconductor device includes forming a sacrificial dielectric pattern with a storage node hole on a substrate, forming a support layer on the sacrificial dielectric pattern, forming a storage node, supported by the support layer, in the storage node hole, performing a full dip-out process to expose the outer wall of the storage node, and performing a cleaning process for removing or reducing a bridge-causing material formed on the surface of the support layer.
1. A method for fabricating a storage node of a semiconductor device, comprising:
forming a sacrificial dielectric pattern with a storage node hole on a substrate; and then
forming a support layer on the sacrificial dielectric pattern; and then
forming a storage node, supported by the support layer, in the storage node hole; and then
performing a full dip-out process to expose the outer wall of the storage node; and then
performing a cleaning process for removing or reducing a bridge-causing material formed on the surface of the support layer; and then
forming a metal silicide layer under the bottom of the storage node; and then
performing a first cleaning process using a mixed solution of NH 4 OH, H 2 O 2 and H 2 O at room temperature and then a second cleaning process using ozone, after the forming of the metal silicide layer.
2. The method of claim 1 , wherein the sacrificial dielectric pattern comprises an oxide layer containing carbon components.
3. The method of claim 2 , wherein the oxide layer comprises a phosphosilicate (PSG) layer or a tetraethyl orthosilicate (TEOS) layer.
4. The method of claim 2 , wherein the support layer comprises a nitride layer.
5. The method of claim 1 , wherein the storage node comprises a titanium nitride layer.
6. The method of claim 1 , wherein the storage node comprises a titanium layer/a titanium nitride layer.
7. The method of claim 1 , wherein the bridge-causing material comprises a metal-carbon cluster that is a combination of the metal in the storage node and the carbon in the sacrificial dielectric pattern.
8. The method of claim 7 , wherein the metal-carbon cluster comprises a titanium-carbon cluster.
9. The method of claim 8 , wherein the cleaning process comprises:
a first cleaning process using a mixed solution of NH 4 OH, H 2 O 2 and H 2 O at room temperature; and
a second cleaning process using ozone.
10. The method of claim 9 , wherein the first cleaning is performed at temperatures of approximately 20° C. to approximately 30° C.
11. The method of claim 9 , wherein the volume percentage (vol %) of the mixed solution of NH 4 OH, H 2 O 2 and H 2 O ranges from approximately 1:4:20 to approximately 1:5:80.
12. The method of claim 9 , wherein the second cleaning is performed at temperatures of approximately 10° C. to approximately 30° C.
13. The method of claim 9 , wherein the ozone concentration ranges from approximately 5 ppm to approximately 100 ppm.
14. The method of claim 9 , wherein the first cleaning and the second cleaning are performed continuously in a single wafer cleaning equipment.
15. The method of claim 9 , further comprising:
performing a plasma nitridation process after the performing of the first cleaning process.