IP Library Granted Patent US 9,348,220
Granted Patent B2
US 9,348,220 · App. 13/077,943 · Granted May 24, 2016

Photoacid generators and photoresists comprising same

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Quick Facts
Patent No.
US 9,348,220
App. No.
13/077,943
Granted
May 24, 2016
Kind
B2
Abstract

New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, photoacid generators that comprise 1) a SO 3 − moiety; 2) one or more fluorinated carbons; and 3) one or more of the fluorinated carbons either directly or indirectly substituted by an ester keto group.

Claims (26)

1. A photoacid generator compound that comprises a structure of the following formula (I):

RO(C═O)(CXY) p (CF 2 ) n SO 3 − M +   (I)

wherein R is hydrogen or non-hydrogen substituent;

X and Y are each independently hydrogen or a non-hydrogen substituent;

p is a positive integer;

n is a positive integer;

M+ is a counter ion.

2. A photoacid generator compound of claim 1 that comprises a structure of the following formula (II):

RO(C═O)(CH 2 ) p (CF 2 ) n SO 3 − M +   (II).

3. A photoacid generator of claim 1 wherein the sum of p and n is at least four.

4. A photoacid generator of claim 1 wherein R is a carbon alicylic or heteroalicylic group.

5. A photoacid generator of claim 1 wherein M+ is a sulfonium or iodonium cation.

6. A photoacid generator compound of claim 1 wherein the photoacid generator compound comprises a structure selected from the following:

7. A photoacid generator compound of claim 1 wherein the photoacid generator compound comprises a structure selected from the following:

8. A photoresist composition comprising a resin component and a photoacid generator compound of claim 6 .

9. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 8 on a substrate;

b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

10. A photoresist composition comprising a resin component and a photoacid generator compound of claim 7 .

11. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 10 on a substrate;

b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

12. A photoresist composition comprising a resin component and a photoacid generator compound of claim 1 .

13. A method for forming a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition of claim 12 on a substrate;

b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

Assignments (4)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS LLC
To: DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC
Reel/Frame 069272/0383 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2016
From: AQAD, EMAD, MR.; LI, MINGQI; XU, CHENG-BAI; LIU, CONG
To: ROHM AND HAAS ELECTRONIC MATERIALS, LLC
Reel/Frame 037716/0166 →